Study of nanoimprint pattern transfer on hydrogen silsesquioxane

Abstract

Articles you may be interested inCombined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns J. Vac. Sci. Technol. B 30, 06F304 (2012); 10.1116/1.4758768 45 nm hp line/space patterning into a thin spin coat film by UV nanoimprint based on condensationThe effects of process parameters on pattern embossing into hydrogen silsesquioxane films and the pattern degradation of hydrogen silsesquioxane were investigated. Methylisobutylketone ͑MIBK͒ was used to dilute hydrogen silsesquioxane, and NX-1000 ͑Nanonex͒ was used to imprint hydrogen silsesquioxane embossed with a Si grating mold at 25°-180°C under 2 -2.5 MPa. The imprint results were observed by scanning electron microscopy and correlated to the analysis results of Fourier transform infrared spectroscopy ͑FTIR͒ and nanoindentation. The FTIR results show that network-type bonding was promoted by dilution with MIBK and increasing baking temperatures from 50°C to 180°C. High-temperature thermal-cycle heat treatment can promote the formation of network bonds, which make hydrogen silsesquioxane film undergo plastic deformation more easily. In contrast, low-temperature thermal-cycle heat treatment can result in hydrogen silsesquioxane having a highly viscous response and high time-dependent deformation behavior. The diluted hydrogen silsesquioxane film under prebaking at 150°C for 3 min and imprinting at 180°C for 2 min under 2.5 MPa resulted in a high-fidelity pattern replication without pattern degradation after aging at room temperature for 20 days.

Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

“…Such a 2DEG can be used to spread the current effectively, and this AlGaN/GaN heterostructure can also be used to confine the holes, which escaped from MQW. Thus, the injection current overflow was diminished and the light emission efficiency was greatly improved [16]. In this paper, the UVLEDs with a SiN buffer layer and an AlGaN insertion layers were prepared.…”

Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

“…Additionally, HSQ can also be used for nanoimprint lithography [12]. At curing temperatures above 200 1C, the solvent evaporates and at around 300 1C, HSQ is transformed to amorphous silicon oxide (SiO x ) [13,14].…”

Quantitative characterizations of a nanopatterned bonded wafer: force determination for nanoimprint lithography stamp removal

“…Demolding thus relies on a controlled balance of forces at the interfaces between the stamp, substrate and imprinted polymer film. Adhesion at the interface and friction between surfaces during this relative motion between the stamp and the resist may induce elastic [12,13] or plastic [14,15] distortion and in some situations irreversible damage (stamp feature breaking down or resist feature ripping of).…”