The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ<3 μm. The layers are grown on GaAs substrates by molecular beam epitaxy metal organic and chemical vapor deposition with thicknesses ranging from 4 to 10 μm. They form improper waveguide structures with the GaAs substrate. The measurements are based on the excitation of the improper waveguide modes with grating couplers at 23 °C. The refractive indices of the layers are derived from the modal propagation constants in the range of 730 nm<λ<830 nm with an estimated uncertainty of Δn=5×10−4. The temperature coefficient of the refractive index is investigated in the same spectral range. From the effective indices of the TE and TM modes, we derive the strain-induced birefringence and the elasto-optic coefficients. High-resolution x-ray diffraction is used to determine the strain of the layers. The layer compositions are obtained with inductively coupled plasma atomic emission spectroscopy. The measurement range of the refractive index is extended from the direct gap to λ<3 μm by observing the Fabry-Pérot interference fringes of the transmission spectra of isolated layers. The measured values of the refractive index and the elasto-optic coefficient are compared to calculated data based on semiempirical models described in the literature. Published data of the index of refraction on GaAs, AlAs and GaP are analyzed to permit the development of a modified Sellmeier approximation. The experimental data on AlxGa1−xAs can be fitted over the entire composition range 0⩽x⩽1 to provide an accurate analytical description as a function of composition, wavelength, and temperature.

We report a remarkable enhancement of the magnetic moments of excitons as a result of their motion. This surprising result, which we have observed in magneto-optical studies of three distinct zinc-blende semiconductors, GaAs, CdTe, and ZnSe, becomes significant as the kinetic energy of the exciton becomes comparable with its Rydberg energy and is attributed to motionally induced changes in the internal structure of the exciton. The enhancement of the magnetic moment as a function of the exciton translational wave vector can be represented by a universal equation.

In nanoimprint lithography (NIL), one of the key points to be addressed is the printing uniformity on large area. During the process, the silicon mold undergoes significant mechanical stress of different kinds (tension, compression, flexion, and torsion). These stresses are function of the mold design and appear under the concurrent influence of both the applied pressure on the backside of the mold and an opposite force due to the polymer viscoelastic behavior. This translates into non-negligible deformations within patterned or unpatterned zones. This is a major issue because it causes nonuniformity of the printing, mold pattern break and degradation of the polymer surface. In this article, we demonstrate that during the imprint process mold deformations really occur at the local scale of the patterns but also at a larger scale.

Articles you may be interested inViscosity measurement of nanoimprint lithography resists with a rheological nanoindenter Effect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithography J.Polymer selection and critical dimension control across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature T g combined with a good etch resistance. In this work, three different polymers have been evaluated. The influence of the temperature and pressing time is analyzed to clarify the correlation between polymer behavior and printing uniformity as a function of the pattern density. Measurements of the polymer residual thickness show that the printing uniformity is strongly correlated with the thermal properties of the polymer.

Sub-100 nm resolution on a 200 mm silicon stamp has been hot embossed into commercial Sumitomo NEB 22 resist. A single pattern, exposed with electron beam lithography, has been considered to define the stamp and thus make it possible to point out the impact of stamp design on the printing. These results may be considered as a first attempt to define rules to solve the proximity printing effects (PPEs). Moreover, a large range of initial resist thickness, from 56 to 506 nm, has been spin coated to assess the effect of polymer flow properties for the stamp cavity filling and the printed defects. A detailed analysis of the printed resist in dense hole patterns showed that the application volume conservation is enough to calculate the residual layer thickness as the height of the printed resist feature. Good accordance has been obtained between the theoretical approach and experimental results. Moreover, the impact of the pattern symmetry breakdown on mould deformation is clearly shown in this paper in the printed areas as well as in the unprinted areas.

Uniformity of the printing process is one of the key parameters of nanoimprint lithography. This technique has to be extended to large size wafers to be useful for several industrial applications, and the uniformity of micro and nanostructures has to be guaranteed on large surfaces. This paper presents results of printing on 200 mm diameter wafers. The residual thickness uniformity after printing is demonstrated at the wafer scale in large patterns (100 µm), in smaller lines of 250 nm and in sub-100 nm features. We show that a mould deformation occurs during the printing process, and that this deformation is needed to guarantee printing uniformity. However, the mould deformation is also responsible for the potential degradation of the patterns.

Sub-100 nm patterns can be duplicated by nanoimprint lithography with high reproducibility, even on 200 mm wafers. Nevertheless, several problems have to be solved before this technique reaches a mature state for industrial applications. Several kinds of defect appear frequently in printed polymers. Some of them are induced by capillary effects and are related to mould deformation. Capillary bridges are observed on the flat surfaces around the pattern areas, or inside the printed structures. In this paper, the influence of the polymer molecular weight (M(w)) on the capillary bridge distribution is presented. It will be shown that for smaller M(w), they appear first around the pattern areas and move towards the structures more rapidly. It is also demonstrated that this evolution depends directly on the printing temperature and pattern filling related to the feature density and the film thickness. Finally, it is shown that the influence of these parameters is related to the polymer viscosity, which is the dominant property of the capillary effects, and a trade-off has to be made between the limitation due to the capillary bridges, the decrease of the temperature, which is important to reduce the cycle time, and the sticking defects.

No abstract