The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ<3 μm. The layers are grown on GaAs substrates by molecular beam epitaxy metal organic and chemical vapor deposition with thicknesses ranging from 4 to 10 μm. They form improper waveguide structures with the GaAs substrate. The measurements are based on the excitation of the improper waveguide modes with grating couplers at 23 °C. The refractive indices of the layers are derived from the modal propagation constants in the range of 730 nm<λ<830 nm with an estimated uncertainty of Δn=5×10−4. The temperature coefficient of the refractive index is investigated in the same spectral range. From the effective indices of the TE and TM modes, we derive the strain-induced birefringence and the elasto-optic coefficients. High-resolution x-ray diffraction is used to determine the strain of the layers. The layer compositions are obtained with inductively coupled plasma atomic emission spectroscopy. The measurement range of the refractive index is extended from the direct gap to λ<3 μm by observing the Fabry-Pérot interference fringes of the transmission spectra of isolated layers. The measured values of the refractive index and the elasto-optic coefficient are compared to calculated data based on semiempirical models described in the literature. Published data of the index of refraction on GaAs, AlAs and GaP are analyzed to permit the development of a modified Sellmeier approximation. The experimental data on AlxGa1−xAs can be fitted over the entire composition range 0⩽x⩽1 to provide an accurate analytical description as a function of composition, wavelength, and temperature.
The mode behavior of symmetric air-post vertical cavity surface emitting lasers is investigated using a unique tandem triple-pass Fabry–Perot interferometer as well as standard characterization techniques. A series of high resolution spectra taken at various current levels demonstrates relaxation oscillations of the fundamental mode and the lifting of mode degeneracy by crystal birefringence and structural anisotropy. Near field images and L–I measurements identify the discontinuous jumps in mode number and polarization.
A standard tandem triple-pass scanning Fabry-Perot interferometer of the Vernier type for applications in the near infrared is described. The Fabry-Perot etalons have been coated with a specially designed dielectric multilayer stack with low loss factors and a uniform reflectivity of (92.5 +/- 1.0)% between 730 and 860 nm. The performances of the instrument, such as resolution, total transmission, and contrast, are equivalent to conventional tandem Fabry-Perot spectrometers but over the whole near-infrared wavelength range. Applications of the system to Brillouin scattering on semiconductors in the transparent wavelength regime and high-resolution spectroscopy of vertical cavity surface-emitting lasers are given.
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