Stamp design effect on 100 nm feature size for 8 inch NanoImprint lithography

Abstract

Sub-100 nm resolution on a 200 mm silicon stamp has been hot embossed into commercial Sumitomo NEB 22 resist. A single pattern, exposed with electron beam lithography, has been considered to define the stamp and thus make it possible to point out the impact of stamp design on the printing. These results may be considered as a first attempt to define rules to solve the proximity printing effects (PPEs). Moreover, a large range of initial resist thickness, from 56 to 506 nm, has been spin coated to assess the effect of polymer flow properties for the stamp cavity filling and the printed defects. A detailed analysis of the printed resist in dense hole patterns showed that the application volume conservation is enough to calculate the residual layer thickness as the height of the printed resist feature. Good accordance has been obtained between the theoretical approach and experimental results. Moreover, the impact of the pattern symmetry breakdown on mould deformation is clearly shown in this paper in the printed areas as well as in the unprinted areas.

Nanoimprinting lithography on 200mm wafers for optical applications

“…Therefore, it should be possible to improve this distribution by improving stamp manufacturing processes. Nevertheless, this relation between the CD and hr values is no more verified for H 0 /H min ratios smaller than 1.73, indicating that such distribution is not only related to stamp design but also related to poor imprint quality [9,10].…”

Sculpting Nanometric Patterns: The Top‐down Approach

“…There are also proximity effects that arise from polymer displacement, which could lead to long distance effects. When a dense array of protrusions in the mould press into the resist thin film, because it is viscous, the excess polymer can migrate to the outer edges of the mould, forming different resist thickness in some areas or holes in unprinted areas [94]. Several recent reviews on nanoimprinting are available [95][96][97][98].…”

Unconventional methods for forming nanopatterns

“…This technique can be used to pattern large areas (8-inch wafers) [194,275] and features as small as $5-6 nm [254,276]. Large-scale patterning via NIL has also been demonstrated with step-and-stamp imprint lithography using a flip-chip bonder [277] and roller nanoimprint lithography (RNIL) [278].…”