Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

Rieger, Torsten; Heiderich, Sonja; Lenk, St.; Lepsa, Mihail Ion; Grützmacher, Detlev

doi:10.1016/j.jcrysgro.2012.05.006

Cited by 81 publications

(112 citation statements)

References 34 publications

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“…14,21,22 Consequently, the nanowire diameter is found to be widely insensitive to the parameters of the implantation process. Minor deviations in the diameter with respect to nanowires at random positions can mainly be explained by a local variation of the nanowire density and therefore the III/V ratio.…”

Section: Discussionmentioning

confidence: 99%

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

Detz

Kriz

Lancaster

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Discussionmentioning

confidence: 99%

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

Detz

Kriz

Lancaster

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The SiO x layer was prepared by a thermal spin-coating process from a hydrogen silsesquioxane (HSQ) film. 18 The GaAs NWs were grown at a substrate temperature of 590 C with a Ga rate of 0.075 lm h À1 and an As 4 beam equivalent pressure of $1.3 Â 10 À6 mbar for 45 min. 18 For the vapor-solid overgrowth of GaAs by InAs, the temperature was reduced to 490 C and the Influx was fixed to 0.1 lm h À1 .…”

Section: Methodsmentioning

confidence: 99%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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“…For example, there are a number of investigations where the diameter of the droplet is considerably larger than the solid-liquid interface (many of these are self-catalysed wires), and the structure is found to be predominantly ZB [28][29][30][31][32][33] . In contrast, most studies which find predominantly WZ structure find a contact angle close to 90°(in cases where contact angle was shown or reported) 7,12,34,35 .…”

Section: Methodsmentioning

confidence: 99%

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

O'Dowd

Wójtowicz

Rouvimov

et al. 2014

Journal of Applied Physics

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GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid (VLS) mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out.This revealed that there were two categories of nanowire present, with differing height and tapering angle.The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission Electron Microscopy (TEM) analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices. a) Electronic mail: odowdbj@tcd.ie

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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

Cited by 81 publications

References 34 publications

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

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