Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

Huang, G. S.; Kuo, Hao‐Chung; Lo, M. H.; Lu, Tien−Chang; Tsai, Jy; Wang, S. C.

doi:10.1016/j.jcrysgro.2007.04.022

Cited by 8 publications

(6 citation statements)

References 18 publications

(21 reference statements)

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“…After 72 h, the relative luminous intensity of sample A increased by 3%. In contrast, the luminous intensity decreased by 12% for sample B and 33% for sample C. Several groups demonstrated that the dislocation density plays an important role in the electrical properties [8,20]. In our study, both DCXRD measurements and AFM measurements indicate that the dislocation densities of undoped GaN layers in the three LED wafers do not have obvious difference.…”

Section: Resultssupporting

confidence: 44%

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The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

Li¹,

Cao²,

Fan³

et al. 2008

Semicond. Sci. Technol.

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We have studied the properties of blue-LED wafers grown on GaN with similar dislocation density and different surface flatness. Results indicate that the smooth surface morphology of the undoped GaN layer leads to better layer periodicity in multiple quantum well (MQW) and smooth surface morphology of LED wafers. The surface flatness of the undoped GaN layer has little effect on the forward voltage and output power of the LED. However, the reverse leakage current and the lifetime of the LED wafer grown on the flatter GaN layer improved evidently. On the other hand, wafers grown on the GaN layer with worse surface flatness show better electrostatic discharge (ESD) characteristics.

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Section: Resultssupporting

confidence: 44%

“…They have concluded that the electrical properties were strongly related to the high dislocation density in the wafers [6,7]. In order to improve the quality of the GaN epitaxial layer, the influences of growth parameters such as nucleation layer [8], V/III ratio [9], pressure [10], etc have been well studied.…”

Section: Introductionmentioning

confidence: 99%

The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

Li¹,

Cao²,

Fan³

et al. 2008

Semicond. Sci. Technol.

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“…Some efforts have been made to improve the anti-electrostatic ability of LED dies. Huang et al [1] proposed an AlGaN/SiN buffer layer used underneath the UV LED. The live percent was improved from 68% to 86% following a 3 kV electrostatic discharge (ESD) test.…”

Section: Introductionmentioning

confidence: 99%

A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package

Chen

Luo

2018

Crystals

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In this study, the small-size and side-view LED packages used in the backlight modules were examined by performing the electrostatic discharge (ESD) process. The high voltages used for the ESD process were 2 kV, 3 kV, and 4 kV. After ESD, the current–voltage curves were scanned from −7 V to 3 V. It was found that the significant leakage currents were in the reverse bias of 4 V~7 V and also in the forward bias of 1 V~2.5 V for ESD-damaged LED chips. However, the phenomenon of a slight increase in current was not found for the non-damaged samples. In our study case, the screening conditions could be set at a bias of −7 V or 2.3 V and the current of 0.1 µA.

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“…However, these methods require additional processing steps, which result in higher production cost. Other methods such as p-GaN roughness, [8] AlGaN/SiN buffer layers [9] for a low dislocation density, Si-delta-doped insertion layers, [10] AlGaN/GaN stack insertion layers, [11] and low temperature n-GaN insertion layers [12] have been proposed. Nevertheless, other methods to achieve a high ESD resistance through internal structure design without introducing an extra protection process are still highly desired.…”

Section: Introductionmentioning

confidence: 99%

Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

Zhao

et al. 2015

IEEE Photon. Technol. Lett.

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Excellent electrostatic discharge (ESD) resistance of InGaN-light emitting diodes (LEDs) is achieved by enhancing the internal capacitance. By inserting 3 pairs of 140/40 nm u/n-GaN (5×10 18 cm -3 ) layers on the low doped n-spacer layer before the active region, the internal capacitance was raised from 50 to 103 pF, while the human body model ESD pass yield at -8000 V was increased from 40% to 98%. A lower energy dispassion on the devices due to the enhanced internal capacitance leads to the excellent ESD resistance.Index Terms-Light-emitting diodes (LEDs), electrostatic discharge (ESD), semiconductor devices.

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Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

Cited by 8 publications

References 18 publications

The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package

Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

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