No abstract

Research on emotion regulation in East Asian children and adolescents is limited. One obstacle hindering the development of emotion regulation for East Asian children and adolescents is the lack of a culturally sensitive measure. To fill this gap, we have developed and validated the Emotional Cultivation Scale using samples of Taiwanese children and adolescents. In Study 1, an exploratory factor analysis (n ϭ 341) identified two factors: Cultivating Emotion Strategies and Understanding Emotion Connotations. A confirmatory factor analysis (n ϭ 358) confirmed this two-factor structure. Coefficient ␣s were .69 to .88 for Emotional Cultivation. Convergent validity was evidenced by positive associations with cognitive reappraisal and cognitive flexibility. Discriminant validity was supported by a nonsignificant association with suppression. Concurrent validity was revealed by positive associations with positive affect, basic psychological need satisfaction, gratitude, responsiveness from teachers, responsiveness from parents, and academic self-efficacy. Incremental validity was evidenced by the finding that emotional cultivation significantly accounted for an additional 2 to 20% of the variance in predicting cognitive flexibility, positive affect, basic psychological need satisfaction, gratitude, responsiveness from teachers, responsiveness from parents, and academic self-efficacy above and beyond cognitive reappraisal and suppression. Results from the multigroup analysis further indicated factor loading invariance and validity invariance between boys and girls and between elementary and middle schools. The factor structure was cross-validated by a clinical sample of Taiwanese children and adolescents (N ϭ 161) and their parents in Study 2 (N ϭ 159). The counseling implications were discussed. Public Significance StatementThe current research has provided an East Asian cultural perspective to extend our understanding of the emotion regulation process. Across two studies, a sound psychometric measure of the Emotional Cultivation Scale (ECS) was developed. This scale is not only appropriate for children and adolescents, but can also be a sensitive measure for clinical populations.

In x Ga 1−x N / GaN ͑x = 0.09, 0.14, 0.24, and 0.3͒ multiple-quantum-wells ͑MQWs͒ samples, with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire substrates. Optical quality was investigated by means of photoluminescence ͑PL͒, cathodoluminescence, and time resolved PL measurements ͑TRPL͒. Two distinguishable emission peaks were examined from the low temperature PL spectra, where the high-and low-energy peaks were ascribed to quantum wells and localized states, respectively. Due to an increase in the localized energy states and absence of quantum confined Stark effect, the quantum efficiency was increased with increasing indium composition up to 24%. As the indium composition reached 30%, however, pronounced deterioration in luminescence efficiency was observed. The phenomenon could be attributed to the high defect densities in the MQWs resulted from the increased accumulation of strain between the InGaN well and GaN barrier. This argument was verified from the much shorter carrier lifetime at 15 K and smaller activation energy for In 0.3 Ga 0.7 N / GaN MQWs. In addition, the polarization-dependent PL revealed that the degree of polarization decreased with increasing indium compositions because of the enhancement of zero-dimensional nature of the localizing centers. Our detailed investigations indicate that the indium content in a-plane InGaN/GaN MQWs not only has an influence on optical performance, but is also important for further application of nitride semiconductors.

The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photoluminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

KAUST Repository Item type Article Authors Ajia, Idris A.; Edwards, P. R.; Liu, Z.; Yan, J. C.; Martin, R. W.; Roqan, Iman S. Citation Excitonic localization in AlN-rich AlxGa1xN/AlyGa1yN multi-quantum-well grain boundaries 2014, 105 (12):122111 Applied Physics Letters