Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

Abstract

Excellent electrostatic discharge (ESD) resistance of InGaN-light emitting diodes (LEDs) is achieved by enhancing the internal capacitance. By inserting 3 pairs of 140/40 nm u/n-GaN (5×10 18 cm -3 ) layers on the low doped n-spacer layer before the active region, the internal capacitance was raised from 50 to 103 pF, while the human body model ESD pass yield at -8000 V was increased from 40% to 98%. A lower energy dispassion on the devices due to the enhanced internal capacitance leads to the excellent ESD resistance.Index Terms-Light-emitting diodes (LEDs), electrostatic discharge (ESD), semiconductor devices.

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

“…As this approach is not beneficial in terms of cost and manufacturing complexity, several chip-level ESD mitigation strategies have been studied and adopted. These include, not being limited to, the tuning of the electron blocking layer thickness, [139] the insertion of a current blocking layer, [140,141] the modification of the epitaxial structure, [142,143] the improvement of the mesa isolation, [144] the reduction in concentration of V-shaped defects in the active region, [145] the optimization of the electrodes, [146] and the addition of floating guard rings. [147] If the temporal duration of the unwanted bias state exceeds the microsecond scale, the condition is referred to as conventional EOS event.…”

A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package

“…Except for those above who used epitaxy to improve ESD, many researchers employed the modified device process. For example, Chang et al [3] proposed a post annealed ZnO film, and Li et al [4] proposed an internal capacitor to enhance the ESD properties. Although these achievements could improve the yield of LED production, the yield, after all, could not reach 100% due to the limited purity of the precursor and the cleanness of the grown chamber.…”