Structural, optical and electrical properties characterization of CdSbTe thin films grown by radiofrequency sputtering

Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films

“…The slow rate of the growing process (4074 nm/h) could influence the amorphization of CdTe films. When we have used a deposition rate in the range 50-65 nm/h the CdTe films grow into polycrystalline structure with the grain size in the interval 40-65 nm [19,20]. Auger mass spectroscopy measurements, achieved employing an ESCA-SAM PHI-560 system, indicated (49.770.5)% Te and (50.370.5)% Cd as atomic concentrations.…”

“…UV-vis absorption spectra measurements were performed in a Unicam 8700 spectrometer system over the 190-900 nm wavelength range. Energy band gap (E g ) measurements were carried out by means of optical absorption spectra by using the Tauc's formula for amorphous semiconductors: (ahn)p(hnÀE g ) m [10][11][12][13][14][15][16][17][18][19][20][21], where a is the absorption coefficient, h is the Planck's constant, n is the frequency of the light, and the exponent m takes the values 1 2 and 2 for allowed direct and indirect transitions [10][11][12][13][14][15][16][17][18][19][20][21]. Actually, as the absorption coefficient is proportional to the optical density (O.D.…”