2009
DOI: 10.1016/j.jcrysgro.2008.12.056
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Crystallization from amorphous structure to hexagonal quantum dots induced by an electron beam on CdTe thin films

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Cited by 12 publications
(5 citation statements)
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“…All spectra showed the CdTe longitudinal optical (LO) mode at the frequency of 166.5 cm −1 and their second order (2LO) mode at 333 cm −1 , characteristic of CdTe. 6 The LO modes of cubic and hexagonal phases of CdTe can coincide at the same frequency, 13 so these measurements agree with those of XRD. The features located at 123 and 142 cm −1 correspond to the phonon vibrations A 1 and E 1 modes, respectively, in the hexagonal Te structure.…”
Section: Resultssupporting
confidence: 62%
“…All spectra showed the CdTe longitudinal optical (LO) mode at the frequency of 166.5 cm −1 and their second order (2LO) mode at 333 cm −1 , characteristic of CdTe. 6 The LO modes of cubic and hexagonal phases of CdTe can coincide at the same frequency, 13 so these measurements agree with those of XRD. The features located at 123 and 142 cm −1 correspond to the phonon vibrations A 1 and E 1 modes, respectively, in the hexagonal Te structure.…”
Section: Resultssupporting
confidence: 62%
“…For example, in tip-induced nano-oxidation of metals and semiconductors , or electrochemical writing in lanthanum aluminate-strontium titanate interfaces, , once the critical tip bias is established, complex nanostructures can be created. Similarly, an electron beam can be used to crystallize or amorphize semiconductor materials , or induce polarization switching in ferroelectrics. , Once the relationship between electron dose and the resultant structures is established, a controlled path scanning can be used to create structures of predefined spatial complexity . A recent overview of such an effort is given in ref .…”
Section: General Considerationsmentioning
confidence: 99%
“…Cadmium telluride (CdTe) is an important II−VI semiconducting material which exists in either zincblende (cubic) or wurtzite (hexagonal) structure with an ideal direct band gap of 1.45 eV at room temperature and an absorption coefficient greater than 1×10 5 cm -1 near the absorption edge, suited for effective photovoltaic energy conversion [1,2]. CdTe can exhibit both n-type and p-type conductivity, which makes it useful for both homo junction and hetero junction configurations.…”
Section: Introductionmentioning
confidence: 99%