Strain effects in epitaxial GaN grown on AlN-buffered Si(111)

Meng, W. J.; Perry, Thomas A.

doi:10.1063/1.357916

Cited by 64 publications

(22 citation statements)

References 20 publications

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“…[1] and [6] for GaN/GaN epilayer, but the DBE position agrees well with the one reported recently for other homoepitaxial stucture [2]. Some shift of the PL position can be related, after Meng and Perry [5], to an unrelaxed strain in our GaN/Si (111) films. It was observed that PL lines in the "edge" part of the emission may shift by as much as 30 meV depending on the stress conditions in the GaN films [9].…”

Section: Methodssupporting

confidence: 78%

“…GaN layers were grown by GSMBE with the growth rate about 0.5 μm/h and substrate temperature of 800°C by a thermally cracking a high purity ammonia in the presence of gallium. In this respect our approach differs from that of Meng and Perry [5], who have used microwaves in growth of GaN films (ECR-MBE) and reported an increasing concentration of lattice defects with the increasing microwave power.…”

Section: Methodsmentioning

confidence: 39%

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Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

et al. 1996

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Section: Methodssupporting

confidence: 78%

Section: Methodsmentioning

confidence: 39%

Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

et al. 1996

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“…Several groups have observed that plasma-grown films have a higher crystallinity than thermal-grown films at similar temperatures [17][18][19]. Crystalline AlN can be used as a buffer layer, for a variety of processes and applications [10,20,21]. However, in order to closer approach the monocrystalline nature of films, as grown by MBE or MOCVD, a great amount of research lies ahead.…”

mentioning

confidence: 97%

PEALD AlN: Controlling growth and film crystallinity

Banerjee

Aarnink

Kruijs

et al. 2015

Phys. Status Solidi C

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We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri‐methyl aluminium (TMA) and NH3‐plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 s of NH3‐plasma pulse, and 350 °C were the optimal conditions for ALD to occur. In‐situ spectroscopic ellipsometry (SE), using a Cauchy optical model, was used to monitor the film growth in real time. The composition of the as‐grown AlN films were determined by X‐ray photoelectron spectroscopy (XPS), which revealed Al/N compositions of approximately 46% and 53%, also with low impurity (O, C) levels. The film crystallinity, measured with grazing incidence X‐ray diffraction (GIXRD), showed polycrystalline hexagonal (wurtzitic) crystalline planes. Finally, several techniques were employed to influence the film crystallinity. These included: ALD at different plasma powers and temperatures, in‐situ treatment of the Si(111) wafer with different plasma parameters (composition, power, duration) prior to deposition, and ALD on Si(100) and SiO2 substrates. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Raman spectroscopy is a noninvasive technique for monitoring strain in heteroepitaxial systems. [14][15][16][17] CdTe has a Raman active transverse optical (TO) and a longitudinal optical mode (LO). The LO mode of the CdTe for unstrained bulk material is reported to be 170 cm -1 and this phonon peak shifts to higher wavenumbers under compressive strain and to lower wavenumbers under tensile strain.…”

Section: Resultsmentioning

confidence: 99%

Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates

Bommena

Seldrum

Samain

et al. 2008

Journal of Elec Materi

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Silicon based substrates for the epitaxy of HgCdTe are an attractive low cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of HgCdTe) is limited by the high lattice and thermal mismatch which creates a lot of strain at the heterointerface that results in high density of dislocations. Previously we have reported 1 theoretical modeling of strain partitioning between CdTe and Si on nanopatterned SOI substrates. In this paper, we present an experimental study of CdTe epitaxy on nanopatterned (SOI). SOI (100) substrates were patterned with interferometric lithography and reactive ion etching to form a 2-D array of silicon pillars with ~250nm diameter and 1µm pitch. MBE was used to grow CdTe selectively on the silicon nanopillars. Selective growth of CdTe was confirmed by SEM, AFM and XPS. Coalescence of CdTe on the silicon nanoislands has been observed from the SEM characterization. Selective growth was achieved with a two step growth process involving desorption of nucleation layer followed by regrowth of CdTe at a rate of 0.2Å/s. Strain measurements by Raman spectroscopy show a lower Raman shift (2.7 ± 2 cm -1 from the bulk value of 170 cm -1 ) in CdTe grown on nanopatterned SOI compared to planar silicon (Raman shift of 4.4 ± 2 cm -1 ), indicating reduced strain on the nanopatterned substrates.

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Strain effects in epitaxial GaN grown on AlN-buffered Si(111)

Cited by 64 publications

References 20 publications

Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

PEALD AlN: Controlling growth and film crystallinity

Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates

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