Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

Godlewski, M.; Bergman, J. P.; Ḿonemar, B.; Rössner, U.; Barski, A.

doi:10.12693/aphyspola.90.789

Acta Phys. Pol. A

1996

DOI: 10.12693/aphyspola.90.789

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Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

M. Godlewski

J. P. Bergman

B. Ḿonemar

et al.

Abstract: Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.

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Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

Abstract: Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.

Cited by 0 publications

References 8 publications

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