2013
DOI: 10.1016/j.nimb.2012.12.077
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Size limit on the phosphorous doped silicon nanocrystals for dopant activation

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Cited by 7 publications
(2 citation statements)
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“…On another note, Si NPs have been successfully hyperdoped with a wide range of different elements including transitions metals, Li, Au, and Er, as well as group III and group V ,, ,, elements. However, reports on impurity concentrations exceeding the thermodynamic limit in Si nanocrystals are very rare.…”
Section: Metastable Group IV Nanostructuresmentioning
confidence: 99%
“…On another note, Si NPs have been successfully hyperdoped with a wide range of different elements including transitions metals, Li, Au, and Er, as well as group III and group V ,, ,, elements. However, reports on impurity concentrations exceeding the thermodynamic limit in Si nanocrystals are very rare.…”
Section: Metastable Group IV Nanostructuresmentioning
confidence: 99%
“…However, the calculated band gap did not perfectly match the measured one due to the partially oxidized surface and substrate-cluster interaction. In addition to the marked effect of particle dimension 088102-9 on electric performance, [78,[98][99][100] the type of dopant (phosphorus or boron), [101] composition material, [102][103][104] surface functionalization [105] and post treatment [106] similarly manifest noticeable effects. For example, by comparing the electronic transport of Si NCs networks using films composed of P-doped Si-NCs with those using films consisting of Si NPs without doping elements, Stegner et al [101] found that the dopant can strongly influence the electronic transport properties of the films.…”
Section: Electronic Propertiesmentioning
confidence: 99%