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The methods for analyzing the current–voltage characteristics of p–n junctions at forward and reverse bias with the calculation of the parameters of recombination centers before and after irradiation with gamma quanta were developed in this work. These methods are simple, convenient, and allow one to determine the parameters of deep levels at one temperature, which makes it possible to use them as express diagnostic techniques, taking measurements immediately on the semiconductor plates at the completion of the main technological processes. It was shown that after irradiation the composition of the centers in the depletion region of the p–n junction changes, the recombination processes and the lifetime begin to determine the divacancy complexes of silicon with oxygen (V2O). It was found that the generation of charge carriers in a strong field of the depletion region of the p–n junction occurs under the influence of the electron–phonon interaction, the parameters of this interaction are determined, and the configuration-coordinate diagrams of recombination centers are constructed.

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