We report a monometallic dysprosium(iii) single molecule magnet with record energy barriers and unusual spin relaxation behaviour.

Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of electricity generation. However, they suffer from significant degradation during the initial stages of use. This problem has been studied for 40 years resulting in over 250 research publications. Despite this, there is no consensus regarding the microscopic nature of the defect reactions responsible. In this paper, we present compelling evidence of the mechanism of degradation. We observe, using deep level transient spectroscopy and photoluminescence, under the action of light or injected carriers, the conversion of a deep boron-di-oxygen-related donor state into a shallow acceptor which correlates with the change in the lifetime of minority carriers in the silicon. Using ab initio modeling, we propose structures of the BsO2 defect which match the experimental findings. We put forward the hypothesis that the dominant recombination process associated with the degradation is trap-assisted Auger recombination. This assignment is supported by the observation of above bandgap luminescence due to hot carriers resulting from the Auger process.

Following our report of the first near-linear lanthanide (Ln) complex, [Sm(N)] (1), herein we present the synthesis of [Ln(N)] [N = {N(SiPr)}; Ln = Eu (2), Tm (3), Yb (4)], thus achieving approximate uniaxial geometries for a series of "traditional" Ln ions. Experimental evidence, together with calculations performed on a model of 4, indicates that dispersion forces are important for stabilization of the near-linear geometries of 1-4. The isolation of 3 under a dinitrogen atmosphere is noteworthy, given that "[Tm(N″)(μ-N″)]" (N″ = {N(SiMe)}) has not previously been structurally authenticated and reacts rapidly with N(g) to give [{Tm(N″)}(μ-η:η-N)]. Complexes 1-4 have been characterized as appropriate by single-crystal X-ray diffraction, magnetic measurements, electrochemistry, multinuclear NMR, electron paramagnetic resonance (EPR), and electronic spectroscopy, along with computational methods for 3 and 4. The remarkable geometries of monomeric 1-4 lead to interesting physical properties, which complement and contrast with comparatively well understood dimeric [Ln(N″)(μ-N″)] complexes. EPR spectroscopy of 3 shows that the near-linear geometry stabilizes m states with oblate spheroid electron density distributions, validating our previous suggestions. Cyclic voltammetry experiments carried out on 1-4 did not yield Ln reduction potentials, so a reactivity study of 1 was performed with selected substrates in order to benchmark the Sm → Sm couple. The separate reactions of 1 with 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO), azobenzene, and benzophenone gave crystals of [Sm(N)(TEMPO)] (5), [Sm(N)(NPh)] (6), and [Sm(N){μ-OPhC(CH)CPhO-κO,O'}] (7), respectively. The isolation of 5-7 shows that the Sm center in 1 is still accessible despite having two bulky N moieties and that the N-donor atoms are able to deviate further from linearity or ligand scrambling occurs in order to accommodate another ligand in the Sm coordination spheres of the products.

We validate for the first time the phenomenological phonon confinement model (PCM) of H. Richter, Z. P. Wang, and L. Ley [Solid State Commun. 39, 625 (1981)] for silicon nanostructures on the sub-3 nm length scale. By invoking a PCM that incorporates the measured size distribution, as determined from cross-sectional transmission electron microscopy (X-TEM) images, we are able to accurately replicate the measured Raman line shape, which gives physical meaning to its evolution with high temperature annealing and removes the uncertainty in determining the confining length scale. The ability of our model to explain the presence of a background scattering spectrum implies the existence of a secondary population of extremely small (sub-nm), amorphous silicon nanoclusters which are not visible in the X-TEM images. Furthermore, the inclusion of an additional fitting parameter, which takes into account the observed peak shift, can be explained by a size-dependent interfacial stress that is minimized by the nanocluster/crystal growth. From this we obtain incidental, yet accurate estimates for the silicon surface energy and a Tolman length, d % 0.15 6 0.1 nm using the Laplace-Young relation.

Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with “deep” electron traps (J. A. Hornbeck and J. R. Haynes, Phys. Rev. 1955, 97, 311) and the recently reported results that have linked LID with the transformation of a defect consisting of a substitutional boron atom and an oxygen dimer (BsO2) from a configuration with a deep donor state into a recombination active configuration associated with a shallow acceptor state (M. Vaqueiro‐Contreras et al., J. Appl. Phys. 2019, 125, 185704). It is shown that the BsO2 complex is a defect with negative‐U properties, and it is responsible for minority carrier trapping and persistent photoconductivity in nondegraded Si:B+O samples and solar cells. It is argued that the “deep” electron traps observed by Hornbeck and Haynes are the precursors of the “slow” forming shallow acceptor defects, which are responsible for the dominant LID in boron‐doped Czochralski silicon (Cz‐Si) crystals. Both the deep and shallow defects are BsO2 complexes, transformations between charge states and atomic configurations of which account for the observed electron trapping and LID phenomena.