Highlights (5 points -85 characters max including spaces)• Selective growth of doped regions by epitaxy on laser ablated textured surfaces.• Metallization by simultaneous plating of n-and p-type contacts in bifacial cells.• Reduced J0,plated for p-type contacts by doping profile engineering with epitaxy.• Thermal SiO2/PECVD SiNx passivation after epitaxy at the same level than ALD Al2O3.