Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

Payo, María Recamán; Li, Yuandong; Russell, Richard; Singh, Sukhvinder; Filipek, Izabela Kuzma; Duerinckx, Filip; Szlufcik, Jozef; Poortmans, Jef

doi:10.1016/j.solmat.2019.110173

Cited by 3 publications

(5 citation statements)

References 43 publications

(38 reference statements)

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“…This is because the surface concentration related to the contact resistance is relatively low as the R sheet increases. To compensate the contact loss caused by the increase in the R sheet , optimization of the Ag-Al (Silver-Aluminum) paste [31], selective emitter technology [32] and plating using a seed layer [33] can be considered.…”

Section: Resultsmentioning

confidence: 99%

Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications

et al. 2020

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In this paper, the relationship between coordination complexes and electrical properties according to the bonding structure of boron and silicon was analyzed to optimize the p–n junction quality for high-efficiency n-type crystalline solar cells. The p+ emitter layer was formed using boron tribromide (BBr3). The etch-back process was carried out with HF-HNO3-CH3COOH solution to vary the sheet resistance (Rsheet). The correlation between boron–silicon bonding in coordination complexes and electrical properties according to the Rsheet was analyzed. Changes in the boron coordination complex and boron–oxygen (B–O) bonding in the p+ diffused layer were measured through X-ray photoelectron spectroscopy (XPS). The correlation between electrical properties, such as minority carrier lifetime (τeff), implied open-circuit voltage (iVoc) and saturation current density (J0), according to the change in element bonding, was analyzed. For the interstitial defect, the boron ratio was over 1.8 and the iVoc exceeded 660 mV. Additional gains of 670 and 680 mV were obtained for the passivation layer AlOx/SiNx stack and SiO2/SiNx stack, respectively. The blue response of the optimized p+ was analyzed through spectral response measurements. The optimized solar cell parameters were incorporated into the TCAD tool, and the loss analysis was studied by varying the key parameters to improve the conversion efficiency over 23%.

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Section: Resultsmentioning

confidence: 99%

Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications

et al. 2020

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“…To obtain the nanostructure on one side, two cleaned SDR wafers in contact with each other were placed on the etching carrier. The nanostructure texture was obtained through vapor-texturing -Epitaxy [24] -Laser doping [18,19]…”

Section: Characteristics Of Phosphorus Doping According To Nanosurfacmentioning

confidence: 99%

“…Damage Removal Figure 1. Comparison between the processes for selective emitter (SE) technologies used in our study and in previous studies [11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Sawmentioning

confidence: 99%

“…Second, better surface passivation on the high-sheet-resistance area enhances the short-circuit current density (J SC ) and open-circuit voltage (V OC ) [6][7][8][9][10]. There are several methods to create an SE, such as dopant-paste printing [11,12], inkjet printing [13,14], etch-back [15,16], and laser techniques [17][18][19][20][21][22][23][24]. However, most of these techniques are applied immediately before or after the doping process, so there are risks to the solar cell manufacturing process.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, most SE technologies are likely to cause misalignment, which results in over-alignment losses in the alignment with the front electrode during the printing process [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Recently, as a new technology to overcome this, the development of a new SE to mitigate the recombination loss by the heavily doped epitaxial layer selectively grown after the passivation process, has been reported [24]. Comparison between the processes for selective emitter (SE) technologies used in our study and in previous studies [11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

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A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells

Park

Cho

et al. 2020

Energies

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Recently, selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In this study, we presented a novel technique for the SE formation by controlling the surface morphology of Si wafers. SEs were formed simultaneously, that is, in a single step for the doping process on different surface morphologies, nano/micro-surfaces, which were formed during the texturing processes; in the same doping process, the nano- and micro-structured areas showed different sheet resistances. In addition, the difference in sheet resistance between the heavily doped and shallow emitters could be controlled from almost 0 to 60 Ω/sq by changing the doping process conditions, pre-deposition and driving time, and temperature. Regarding cell fabrication, wafers simultaneously doped in the same tube were used. The sheet resistance of the homogeneously doped-on standard micro-pyramid surface was approximately 82 Ω/sq, and those of the selectively formed nano/micro-surfaces doped on were on 62 and 82 Ω/sq, respectively. As a result, regarding doped-on selectively formed nano/micro-surfaces, SE cells showed a JSC increase (0.44 mA/cm2) and a fill factor (FF) increase (0.6%) with respect to the homogeneously doped cells on the micro-pyramid surface, resulting in about 0.27% enhanced conversion efficiency.

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Ammonium tetraborate tetrahydrate as a new boron source for the fabrication of p-type emitters in silicon solar cell

et al. 2022

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Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

Cited by 3 publications

References 43 publications

Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications

Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications

A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells

Ammonium tetraborate tetrahydrate as a new boron source for the fabrication of p-type emitters in silicon solar cell

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