Radiation-hardened techniques for CMOS flash ADC

Gatti, U.; Calligaro, Cristiano; Pikhay, Evgeny; Roizin, Yakov

doi:10.1109/icecs.2014.7049906

Cited by 9 publications

(6 citation statements)

References 6 publications

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“…The effects of the total ionizing dose (TID) on electronic devices are critical issues in various fields such as space and nuclear applications. To reduce the radiation effects on the electronic components, three radiation hardening methods have been widely considered: radiation hardening by process (RHBP), radiation hardening by shielding (RHBS), and radiation hardening by design (RHBD) [1][2][3][4]. The international thermonuclear experimental reactor (ITER) studies the TID effect for the development of a precise remote control system [5].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Won¹,

Ham²,

Jeong³

et al. 2019

Applied Sciences

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Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (V T ). The channel insulator was composed of two materials, SiO 2 and HfO 2 . To improve the accuracy of the simulation, the interfacial trap parameter of SiO 2 and HfO 2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less V T shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the V DD and channel doping.

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Section: Introductionmentioning

confidence: 99%

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Won¹,

Ham²,

Jeong³

et al. 2019

Applied Sciences

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“…Additionally, the sigma-delta ADC that has a high resolution but operates at a slow sampling rate may not be suitable. As a result of analyzing each ADC in terms of TID tolerance and SEE tolerance, the flash ADC is vulnerable to TID because it uses multiple comparators [ 9 ]. The pipelined ADC and the sigma-delta ADC also use multiple comparators and amplifiers, so the performance can be easily degraded by TID [ 10 , 11 ].…”

Section: Soft-error-tolerant Adc Structurementioning

confidence: 99%

A Soft-Error-Tolerant SAR ADC with Dual-Capacitor Sample-and-Hold Control for Sensor Systems

Lee

2021

Sensors

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For a reliable and stable sensor system, it is essential to precisely measure various sensor signals, such as electromagnetic field, pressure, and temperature. The measured analog signal is converted into digital bits through the sensor readout system. However, in extreme radiation environments, such as in space, during flights, and in nuclear fusion reactors, the performance of the analog-to-digital converter (ADC) constituting the sensor readout system can be degraded due to soft errors caused by radiation effects, leading to system malfunction. This paper proposes a soft-error-tolerant successive-approximation-register (SAR) ADC using dual-capacitor sample-and-hold (S/H) control, which has robust characteristics against total ionizing dose (TID) and single event effects (SEE). The proposed ADC was fabricated using 65-nm CMOS process, and its soft-error-tolerant performance was measured in radiation environments. Additionally, the proposed circuit techniques were verified by utilizing a radiation simulator CAD tool.

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“…Flash ADCs have a high sampling rate but have limited resolution around 6-7 bit. Also, since a large number of comparators are used, ADC performance may be greatly degraded due to transistor variations caused by TID [6]. Pipelined ADCs can achieve high resolution, but performance can be degraded by TID because multiple amplifiers and comparators are used in its multi-stage structure [7].…”

Section: Radiation-hardened Adc Structurementioning

confidence: 99%

A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems

Min

Kang

et al. 2019

Sensors

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For stable and effective control of the sensor system, analog sensor signals such as temperature, pressure, and electromagnetic fields should be accurately measured and converted to digital bits. However, radiation environments, such as space, flight, nuclear power plants, and nuclear fusion reactors, as well as high-reliability applications, such as automotive semiconductor systems, suffer from radiation effects that degrade the performance of the sensor readout system including analog-to-digital converters (ADCs) and cause system malfunctions. This paper investigates an optimal ADC structure in radiation environments and proposes a successive- approximation-register (SAR) ADC using delay-based double feedback flip-flops to enhance the system tolerance against radiation effects, including total ionizing dose (TID) and single event effects (SEE). The proposed flip-flop was fabricated using 130 nm complementary metal–oxide–semiconductor (CMOS) silicon-on-insulator (SOI) process, and its radiation tolerance was measured in actual radiation test facilities. Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.

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Radiation-hardened techniques for CMOS flash ADC

Cited by 9 publications

References 6 publications

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

A Soft-Error-Tolerant SAR ADC with Dual-Capacitor Sample-and-Hold Control for Sensor Systems

A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems

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