Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.
This letter describes 3-D NAND flash memory architecture having four-level stacked single-crystalline silicon nanowire channels. Previously, we designed 3-D NAND flash memory architecture based on single-crystalline channel stacked array (CSTAR). In this letter, CSTAR NAND flash memory is fabricated and its operations are verified. Successful memory operations of each stacked array of CSTAR including program/erase, retention, and endurance performances are demonstrated. Index Terms-3-D NAND flash memory, memory operation, nanowire SONOS, stacked array.
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