Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Abstract

Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (V T ). The channel insulator was composed of two materials, SiO 2 and HfO 2 . To improve the accuracy of the simulation, the interfacial trap parameter of SiO 2 and HfO 2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less V T shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the V DD and channel doping.

Numerical Simulation of Field-effect Transistor GAA SiNWFET Parameters Based on Nanowires

“…In particular, it is well-fixed at increased temperatures of 380 K and 400 K, and, moreover, negatively influences the curvature of transistor transmission characteristics. Obtained results are wellcorrelated with the results obtained by us and other authors in case of SiNW FETs [1-3, 7, 14-16] and FinFETs [3,4,7]. It should be noted that direct studies of the structure and phase states, electrophysical properties of thermal-stable bimetallic film alloys have been obtained by theauthors in [17][18][19][20].…”

“…Among them, except the possibility of further nanoscale procedure, GAA NWFETs have excellent gate controlling, short-channel effects (SCEs) stability [5,6], etc. As an example, in paper [7], structural models of a 5-channel GAA NWFET were designed and their performance characteristics were compared depending on the operating conditions. The authors of [8] showed that NW-channel transistors have better operating characteristics than FinFETs, their concentration and other dependencies were analyzed.…”

TID Circuit Simulation in Nanowire FETs and Nanosheet FETs

“…Various models (trap-detrap, mobility, etc.) were used to improve the accuracy of the simulation [11][12][13][14]. After irradiation at 1 rad/s, when the desired amount of radiation stress was applied, the gate voltage was swept to 0 V again.…”

Temperature Characteristics of Gaa Sіnwfet's Transistor Structures

“…The results of numerical simulation by Silvaco TCAD [1] of 3D FET-transistors with five n-type of conductivity Si-nanowires (n-SiNW FET's) 5-channels, based on Gate-all-around (GAA) structure are presented. Among them except the possibility of further nanoscale procedure, GAA n-SiNW FET's have an excellent gate controlling, short-channel effects (SCE's) stability [2][3][4][5][6], etc. It is demonstrated their distinct electrical characteristics, in particular there were obtained the valid values of threshold voltage V t , leakage current I off and I on /I off coefficient, subthreshold scattering SS and drain induced barrier lowering (DIBL).…”