Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

Kumar, Praveen; Mahapatra, Santanu

doi:10.1109/tnano.2009.2033380

Cited by 21 publications

(20 citation statements)

References 5 publications

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“…Figure 3 shows the electrostatic potential of the proposed gate all around transistor, and it is found to be constant value at 0.3 V. Continuously varying the and terms in (4) has no impact on the potential as it remains constant along the insulator boundaries. This is totally in contrast to the results obtained in [15] where the potential is found to be linearly varying in the insulator boundaries. The constant potential has to be deduced as the resultant of the gate voltage applied symmetrically across the four sides of the transistor.…”

Section: Quantum Threshold Voltage Modelingcontrasting

confidence: 99%

“…But, in the weak inversion regime, we have approximated the Poisson equation as Laplace equation with the inversion charge density neglected, and thus the two equations are decoupled. The midgap metals are used for gate, intended to suppress the silicon gate poly depletion induced parasitic capacitances [15]. The 3D Poisson equation is solved to obtain the threshold voltage in the weak inversion region, including the parabolic band approximation.…”

Section: Threshold Voltage Modelingmentioning

confidence: 99%

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Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

Pandian¹,

Balamurugan²,

Pricilla³

2013

Active and Passive Electronic Components

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An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the threshold voltage. Device geometrics play a very important role in multigate devices, and hence their impact on the threshold voltage is also analyzed by varying the height and width of silicon channel. The inversion charge and electrical potential distribution along the channel are expressed in their closed forms. The proposed model shows excellent accuracy with TCAD simulations of the device in the weak inversion regime.

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Section: Quantum Threshold Voltage Modelingcontrasting

confidence: 99%

Section: Threshold Voltage Modelingmentioning

confidence: 99%

Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

Pandian¹,

Balamurugan²,

Pricilla³

2013

Active and Passive Electronic Components

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“…The charge concentration per unit length per valley in the silicon inversion layer, considering silicon has four transverse and two longitudinal energy valleys, is given as 16) where N 1D is the 1-D density of states such that N 1D ¼ 1 ℏπ ffiffiffiffiffiffiffiffiffi ffi m x K p T and f (E) is the Fermi-Dirac distribution function. 23 The total inversion charge contributed by all the subbands can then be written as…”

Section: Quantum Inversion Charge Modelingmentioning

confidence: 99%

Three‐dimensional analytical modeling and performance analysis of triple material trigate silicon‐on‐insulator MOSFET

Shora

Khanday

2019

Int J Numerical Modelling

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The semiconductor industry has implemented the technique of wrapping the gate electrode on different sides of channel to mitigate the degrading electrostatic effects in nanometer transistor. Intel adopted trigate architecture, wherein the channel is surrounded by gate electrode on three sides to improve the gate control over the channel. In order to further enhance the performance and diminish the short channel effects, triple material trigate silicon-oninsulator (SOI) MOSFET is explored in this work. An analytical model to determine the device electrostatics and match deviations due to device geometry has also been developed. The consequence of quantum confinement effects (QMEs), which arise due to ultra-thin body structure, on the inversion charge and threshold voltage has also been included. Thus, the analytical model presented in this work is based on a self-consistent solution of threedimensional Poisson's equation and two-dimensional Schrodinger equation with proper boundary conditions. The model is verified by the uniformity obtained between the results from analytical model and TCAD simulations. The superiority of the device has been demonstrated by comparing performance parameters like potential distribution, field variations, drain induced barrier lowering (DIBL) with already existing device structures like single material trigate (SMTG) and dual material trigate (DMTG) SOI MOSFETs

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“…In TG metal‐oxide‐semiconductor field effect transistors (MOSFETs), three gates, which are controlled by a single gate contact, give rise to an excellent short‐channel effect (SCE) immunity, which in turn, makes the device ultra‐scalable . The quad‐gate (QG) MOSFET , in which four gates surround the channel, is a natural extension of TG MOSFETs for future ultra‐large‐scale integration. Ultimate gate control can be achieved in QG MOS devices as the four gates work in unison and do not allow the drain to take control on the channel charges.…”

Section: Introductionmentioning

confidence: 99%

“…Many attempts have been made to model the threshold voltage characteristics of QG MOSFETs . Sharma et al have presented a 3D threshold voltage model for a QG MOSFETs utilizing the concept of ‘virtual‐cathode’ potential.…”

Section: Introductionmentioning

confidence: 99%

Threshold voltage modeling for dual‐metal quadruple‐gate (DMQG) MOSFETs

Samoju

Tiwari

2015

Int J Numerical Modelling

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Summary In this paper, a three‐dimensional (3D) model of threshold voltage is presented for dual‐metal quadruple‐gate metal‐oxide‐semiconductor field effect transistors. The 3D channel potential is obtained by solving 3D Laplace's equation using an isomorphic polynomial function. Threshold voltage is defined as the gate voltage, at which the integrated charge (Qinv) at the ‘virtual‐cathode’ reaches to a critical charge Qth. The potential distribution and the threshold voltage are studied with varying the device parameters like gate metal work functions, channel cross‐section, oxide thickness, and gate length ratio. Further, the drain‐induced barrier lowering has also been analyzed for different gate length ratios. The model results are compared with the numerical simulation results obtained from 3D ATLAS device simulation results. Copyright © 2015 John Wiley & Sons, Ltd.

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Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

Cited by 21 publications

References 5 publications

Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

Three‐dimensional analytical modeling and performance analysis of triple material trigate silicon‐on‐insulator MOSFET

Threshold voltage modeling for dual‐metal quadruple‐gate (DMQG) MOSFETs

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