Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

Abstract

An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the threshold voltage. Device geometrics play a very important role in multigate devices, and hence their impact on the threshold voltage is also analyzed by varying the height and width of silicon channel. The inversion charge and electrical potential distribution along the channel are expressed in their closed forms. The proposed model shows excellent accuracy with TCAD simulations of the device in the weak inversion regime.

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

“…This study does not take into account the ballistic transport and quantum mechanical effects (QMEs), which become dominant only when the channel length and thickness are less than 10 nm, respectively [34,44]. When ballistic transport and quantum mechanical effects become significant (channel length<10 nm and channel thickness<10 nm), they can lead to subthreshold conduction, channel length modulation, increased short channel effects, threshold voltage shift, non-equilibrium carrier distribution, and enhanced carrier mobility [45][46][47][48][49]. Table 3 shows the improvement in device characteristics of GSI-NWM by using germanium as a source material.…”