Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

Abstract

This paper critically investigates the effect of doping on different device characteristics of a Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The doping of source, channel, and drain has a prominent effect on important device characteristics, which has been investigated through DC and AC analysis performed on the SILVACO TCAD simulator. A numerical computational-based simulation study has been used to investigate the modulation of various device characteristics, such as threshold voltage, cut-off frequency, subthreshold swing, MTPG, current ratio, channel resistance, and transconductance. The investigation revealed a strong dependence of most of these characteristics on the source, channel, and drain doping levels, providing valuable insights into device performance. Proper optimization in doping can significantly improve the performance of the device. A compact physics-based analytical model has been mathematically evaluated and proposed in this work, showing an excellent in-line agreement with the simulated results. This is a novel approach for improving the analog performance parameters of a nanowire MOSFET through doping optimization, which incorporates gate oxide stacking and germanium as a source material. In this work, the biosensing capability of the GSI-NWM has also been discussed and evaluated.

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

“…As demonstrated in Fig. 6a, the drain ON current which is measured at V GS = V DS = 1.0 V, 35 significantly increases following the immobilization of several neutral biomolecules, including streptavidin, biotin, ferro-cytochrome c, keratin, and gelatin. 45,54 This happens because the flat band voltage in the nanocavity region is affected by the biomolecules' changing dielectric constant, which changes the surface potential and, ultimately, the drain current.…”

“…Higher source doping increases charge carriers, reducing threshold voltage and boosting on-current, but it also diminishes subthreshold swing sensitivity; meanwhile, channel doping primarily influences threshold voltage and subthreshold swing with a lesser impact on sensitivity, notably concerning these metrics as sensing parameters. 34,35 When making small-scale devices, the silicon dioxide (SiO 2 ) gate insulator should be replaced with a high-k dielectric gate oxide material, such as hafnium oxide, while maintaining appropriate z E-mail: shivaniyadav.ece@gmail.com; rewarisonam@gmail.com ECS Journal of Solid State Science and Technology, 2023 12 127008 oxide thickness (EOT) as a constant. 23 Hetero Dielectric structure in which combinations of low dielectric material together with high dielectric materials are utilised for FETs have been reported in literature to boost ON current 36 and reduce the OFF state leakages.…”

Quantum and classical simulation of core shell based junctionless field effect transistor with digital application

“…Das et al [19] have investigated the effect of doping on the performance of Ge/Si interfaced nanowire MOSFET. Further, Panchore et al [20] have analysed the aging mechanism of p-type dopingless Junctionless field effect transistor for the first time.…”

Gate electrode stacked source/drain SON trench MOSFET for biosensing application

“…Das et al presented MOSFET biosensors related to the surrounding gate (basically step-graded channel with a germanium source) and Ge/Si interfaced nanowire MOSFET biosensors, where surrounding gate biosensors were capable to overwhelm the SCEs better than the others [28][29][30].…”