Gate electrode stacked source/drain SON trench MOSFET for biosensing application

Abstract

This work inspects a dielectrically modulated (DM) stacked source/drain SiGe dual-metal trench gate silicon on nothing (SON) metal–oxide–semiconductor field-effect transistor (SiGe-DMTG SON MOSFET) biosensor to enhance the sensing capability of the device. A nano-cavity is implanted in the either side of gate area for immobilization of biomolecules which can modulate the gate capacitance and dielectric constant of the nanocavity area. Thus the device undergoes a threshold voltage shift which has a great impact on device sensitivity. So SiGe-DMTG SON MOSFET biosensor is proposed to identify the sensing performance of various analytes like Uricase (k=1.54), Streptavidin (k=2.1), Biotin (k=2.63), 3-aminopropyltriethoxysilane (APTES) (k =3.57) and protein (k =8) using DM technique. The electrostatic properties of the neutral biomolecules such as electrostatic potential, electric field, On current, switching ratio, threshold voltage, On current sensitivity, threshold voltage sensitivity, and subthreshold performance of SiGe-DMTG SON MOSFET biosensor have been evaluated using 2D ATLAS device simulator. Further, the parasitic capacitances of the proposed biosensor has been investigated for different biomolecules in the nano-cavity region in order to observe the sensing performance of the device .From the result analysis it has been observed that for protein (k =8) , the proposed SiGe-DMTG SON MOSFET biosensor offers a threshold voltage sensitivity of 0.581 and On current sensitivity of 1.765. Apart from this, protein (k =8) offers a strong threshold voltage shift of 104.8mV with respect to k=1 shows best suited for biosensing application.

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

“…In order to minimize the effective thickness of the gate oxide, a composite layer has been formed by stacking a high-K HfO 2 layer atop of an Al 2 O 3 layer, 46 a configuration known to improve short-channel effects. 11,24,47 This stacking is also capable of enhancing the sensitivity of the proposed biosensor by a significant amount.…”

“…In this study, an exhaustive exploration of device sensitivity is undertaken, encompassing various neutral biomolecules, including Streptavidin (K = 2.1), APTES (K = 3.57), Hydroprotein (K = 5), Keratin (K = 8), and Gelatin (K = 12). 24,[27][28][29] Furthermore, the proposed GAAE-GANFET biosensor is juxtaposed with a silicon (Si) channel FET biosensor, namely the SGAA-Si FET biosensor, to facilitate a comprehensive comparison. This comparison is centered on their drain current characteristics and diverse sensitivities, with particular emphasis on their capability to detect neutral biomolecules.…”

“…[18][19][20] Trench gate structure provides excellent improvement in biosensing. [21][22][23][24] The biosensor designs introduced recently, including GC-CPTFET 25 and Lg-TGNFET, 26 are aligned in their objective to progress label-free biomolecule detection. Each design incorporates distinct features, such as a graphene channel and tri-layer graphene nanoribbon, contributing collaboratively to the ongoing development of biosensing technologies.…”

“…37,38 Numerous works in the literature have showcased the advantages of GaN as the channel material and the graded channel architecture. 23,24 This paper proposes a gate all around engineered gallium nitride FET (GAAE-GANFET) based biosensor. The novelty of this work lies in its utilization of both gate all around engineering and channel engineering techniques.…”

Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

“…This study focuses on the incorporation of many materials, specifically GaAs/AlGaAs, InGaAs/AlGaAs, and AlGaN/InGaN. The primary objective is to create advanced gadgets with exceptional performance, which have garnered significant interest within the scientific community [9,10]. However, the TFET encounters challenges such as ambipolar behaviour (conduction occurring at both positive and negative edges), limited current driving capability (due to a restricted number of charge carriers tunnelling through the junction), and ongoing efforts to tackle these issues.…”