Performance optimization of AlGaAs and Al _x Ga _1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

Abstract

This work aims to enhance the effectiveness of the Double GateJunctionless Tunnel Field Effect Transistor (DG-JL-TFET) by optimizing the utilization of AlGaAs and GaAs/Si/AlGaAs-based Single Material and Tri-Materials(SM and TM). The TM structure demonstrates a greater On-State current (Ion)and a reduced Subthreshold Swing (SS) in comparison to SM- Structures. This study quantifies the two RF Performance Metrics, namely Unit-Gain-Current-Cut-off-Frequency (ft) and Maximum oscillation frequency fmax, by manipulating the structural factors such as gate length, gate oxide thickness, and Channel thickness. The TM structure exhibits a much greater On-State-Current (Ion) of 14 × 10−3mA compared to SM structures, while also reducing the Off-State-Current (Ioff ), Subthreshold Swing (SS) and Threshold-Voltage (Vt).TM structures exhibit higher values of ft and fmax in comparison to the SM structure of DG-JL-TFET due to their enhanced output conductance. Given the elevated magnitudes of (ft) and fmax, the device exhibits potential for forthcoming low-power-RF applications.