This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.
This paper critically investigates the effect of doping on different device characteristics of a Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The doping of source, channel, and drain has a prominent effect on important device characteristics, which has been investigated through DC and AC analysis performed on the SILVACO TCAD simulator. A numerical computational-based simulation study has been used to investigate the modulation of various device characteristics, such as threshold voltage, cut-off frequency, subthreshold swing, MTPG, current ratio, channel resistance, and transconductance. The investigation revealed a strong dependence of most of these characteristics on the source, channel, and drain doping levels, providing valuable insights into device performance. Proper optimization in doping can significantly improve the performance of the device. A compact physics-based analytical model has been mathematically evaluated and proposed in this work, showing an excellent in-line agreement with the simulated results. This is a novel approach for improving the analog performance parameters of a nanowire MOSFET through doping optimization, which incorporates gate oxide stacking and germanium as a source material. In this work, the biosensing capability of the GSI-NWM has also been discussed and evaluated.
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