Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das, Amit K.; Rewari, Sonam; Kanaujia, Binod Kumar; Deswal, S. S.; Gupta, Rashmi

doi:10.1002/jnm.3106

Cited by 23 publications

(13 citation statements)

References 75 publications

(87 reference statements)

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“…By following these steps, the quartic‐step graded channel can be successfully fabricated in the SG‐MOSFET, providing the desired doping profile for improved device performance. The fabrication of a similar step‐graded profile has been shown recently by Amit et al 41 and Okumura et al 42 …”

Section: Device Structure Simulation and Fabricationmentioning

confidence: 82%

“…By following these steps, the quartic-step graded channel can be successfully fabricated in the SG-MOSFET, providing the desired doping profile for improved device performance. The fabrication of a similar step-graded profile has been shown recently by Amit et al 41 and Okumura et al 42 To form the source and drain contacts, a horizontal tube-shaped furnace can be used with a forming gas composition consisting of 90% N 2 and 10% H 2 , allowing for silicidation. 43 SiO 2 layer can be mounted on the cylindrical surface using oxide mandrill patterning.…”

Section: First Dopingmentioning

confidence: 99%

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Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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Section: Device Structure Simulation and Fabricationmentioning

confidence: 82%

Section: First Dopingmentioning

confidence: 99%

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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“…The graded channel lowers the short channel effects (SCEs) and improves the drive current of the device without scaling it [8,86]. Using the tri-step graded doping causes a sudden change of potential across the channel, and this sharp change induces a larger electric field than the non-step graded doping [87]. This critical electric field imparts a more vital force on the charge carriers moving from the source to the drain, which improves the carrier transportation mechanism in a graded channel [88].…”

Section: Resultsmentioning

confidence: 99%

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Das,

Rewari,

Kanaujia

et al. 2023

Phys. Scr.

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This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors. A compact two-dimensional analytical model for channel potential, drain current, threshold voltage, and subthreshold swing has been formulated and agrees well with the simulated results. The comprehensive investigation of different device parameters, including doping and bias, offers valuable insights into optimizing the biosensor’s performance. The proposed biosensor exhibits remarkable sensitivity, achieving up to 263 mV and 1495.52 nA for certain biomolecules, which has been validated by a compact analytical model and simulations performed on the SILVACO TCAD simulator. Several parameters are employed to assess the biosensor’s effectiveness: threshold voltage, ION/IOFF ratio, subthreshold swing, off-current, peak trans-conductance, and on-current. Furthermore, the biotube channel design enables lightweight and cost-efficient biosensors, enhancing the biosensor’s practicality. This work also includes an analysis of the effect of temperature on the biosensor’s performance and characteristics, providing insights into practical applications. High sensitivity of the biosensor signifies a significant advancement in biosensing technology, suggesting a wide range of potential applications in biomedical field.

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“…1d. Initial steps in the fabrication 56 of the biosensor include substrate preparation, silicon epitaxial growth, sacrificial layer deposition, gate dielectric deposition 32,57 using methods like thermal oxidation or chemical vapor deposition (CVD), gate electrode deposition using methods like PVD or CVD 58 and Gate All Around nanowire FET formation, 59,60 which will function as the biosensor's sensing element. 58…”

Section: Device Architecture and Simulation Environmentmentioning

confidence: 99%

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

Yadav,

Rewari

2023

ECS J. Solid State Sci. Technol.

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The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure’s metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor’s output properties, including surface potential, electron concentration, threshold voltage drift (ΔVTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( A V int ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity ( S I ON ) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.

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Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Cited by 23 publications

References 75 publications

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

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