Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Abstract

This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors. A compact two-dimensional analytical model for channel potential, drain current, threshold voltage, and subthreshold swing has been formulated and agrees well with the simulated results. The comprehensive investigation of different device parameters, including doping and bias, offers valuable insights into optimizing the biosensor’s performance. The proposed biosensor exhibits remarkable sensitivity, achieving up to 263 mV and 1495.52 nA for certain biomolecules, which has been validated by a compact analytical model and simulations performed on the SILVACO TCAD simulator. Several parameters are employed to assess the biosensor’s effectiveness: threshold voltage, ION/IOFF ratio, subthreshold swing, off-current, peak trans-conductance, and on-current. Furthermore, the biotube channel design enables lightweight and cost-efficient biosensors, enhancing the biosensor’s practicality. This work also includes an analysis of the effect of temperature on the biosensor’s performance and characteristics, providing insights into practical applications. High sensitivity of the biosensor signifies a significant advancement in biosensing technology, suggesting a wide range of potential applications in biomedical field.

Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

“…8,9 The presence of biomolecules possessing a specific dielectric constant within the nanocavity leads to a modification in the gate dielectric capacitance, resulting in a discernible alteration in the threshold voltage. 4,10 Also, the variation in the current due to the threshold voltage change confirms the existence of the specific biomolecules. 9,11 The fabrication of traditional FET biosensors at ultra-small device sizes is currently challenging due to serious issues such as short-channel effects (SCEs), 12 drain-induced barrier lowering (DIBL), hot electron effects, impact ionisation effects, sub-threshold swing, and gate tunnelling current.…”

Analytical modelling and reliability analysis of charge plasma-assisted Mg2Si/Si heterojunction doping less DGTFET for low-power switching applications

“…Figure 4(a) presents a plot depicting the transconductance (g m ), which characterizes the rate of change of drain current (I d ) concerning the gate voltage (V gs ) while maintaining a constant drain voltage (V ds ) [40]. The peak of the g m curve indicates the optimal bias point for employing the device as an amplifier.…”

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N+ pocket as label free biosensors

“…Food supply chains, medical devices, and environmental monitoring systems are just a few examples of the industrial uses for biosensors. Due to its many benefits, including being able to detect charged biomolecules as well as inexpensive cost, FET-based biosensors have been studied [6]. Biosensors made from field-effect transistors (FETs) have gained popularity due to their excellent capacity to identify biomolecules without the usage of labels [7].…”