Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

Das, Amit K.; Rewari, Sonam; Kanaujia, Binod Kumar; Deswal, S. S.; Gupta, Rashmi

doi:10.1007/s10825-023-02008-w

Cited by 29 publications

(10 citation statements)

References 53 publications

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“…Molybdenum can be defined on top of the gate oxide through electron beam lithography (EBL), evaporation, and liftoff. 45 Various methods have been proposed for the realization of the GME architecture, including tilt angle evaporation metal gate deposition, 46,47 metal interdiffusion process, 48 and fully silicided (FUSI) metal gate. 49…”

Section: First Dopingmentioning

confidence: 99%

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Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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Section: First Dopingmentioning

confidence: 99%

“…Various methods have been proposed for the realization of the GME architecture, including tilt angle evaporation metal gate deposition, 46,47 metal interdiffusion process, 48 and fully silicided (FUSI) metal gate 49 …”

Section: Device Structure Simulation and Fabricationmentioning

confidence: 99%

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

Self Cite

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“…Emam et al [26] has experimentally investigated the noise performance in a graded channel MOSFET. MOSFET structures with gate length under 20 nm have been already reported in the past and are feasible [27][28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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“…Semiconductorbased composite materials show a great advantage in extending electrical response and optical response. 1 For example, metal-oxide-semiconductor field-effect transistor has been extensively used in field-effect transistors, which is applied in the field of biomedical, electronics engineering and optical/electrical carrier transmission. [2][3][4][5] By contrast, filler-reinforced composite materials (FCMs) are usually designed to improve the thermal, electrical and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

“…1 For example, metal-oxide-semiconductor field-effect transistor has been extensively used in field-effect transistors, which is applied in the field of biomedical, electronics engineering and optical/electrical carrier transmission. [2][3][4][5] By contrast, filler-reinforced composite materials (FCMs) are usually designed to improve the thermal, electrical and mechanical properties. FCM consisting of functional fillers and polymer matrix have attracted numerous attentions in a wide range of fields including energy conversion, electronic devices chemical reaction, and so forth, by virtue of their versatile microstructures, excellent properties, and low fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

Quantitively evaluation of fillers' alignment for targeted manufacturing of functional composite materials

Zhang,

Ye,

Yang

et al. 2023

Polymer Composites

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Filler‐reinforced composite materials are widely used in numerous domains such as energy, optoelectronics, chemistry, and so forth, owing to their versatile microstructures, excellent properties, and low fabrication cost. By finely regulating the distribution and orientation of fillers in the base material, composite materials with fantastic thermal, chemical, and mechanical properties have been demonstrated, which are also known as “metamaterials”. For the anisotropic fillers, the orientation of fillers is crucial for designing and predicting the properties of composite materials. However, accurate and efficient evaluation of fillers' orientation remains a challenge, which severely hinders the microstructural design and topological optimization of composite materials. To solve this problem, a bidirectional pixel‐traversal method which combines with microscopic image processing was developed to evaluate the orientation of fillers in composite materials. Specifically, a vertical orientation maximization algorithm was designed to evaluate the oriented degree and oriented direction of the whole fillers, and a crossing traversal algorithm was designed to evaluate the oriented angle of individual filler. Further, this method was applied to the evaluation of microscopic images from different researches. The evaluated results show a high accuracy (average error is less than 2%) and wide applicability in the evaluation of different types of fillers. This method reveals the underlying relationship between microscopic filler orientation and macroscopic composites properties, which paves a new way for the direct optimization and processing of composite materials.

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Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

Cited by 29 publications

References 53 publications

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Quantitively evaluation of fillers' alignment for targeted manufacturing of functional composite materials

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