Magnetic Field Effect on Threshold Voltage for Ultrathin Silicon Gate-All-Around Nanowire Field-Effect-Transistors

Abdelhamid, Hamdy; Anis, Azza M.; Aboulwafa, M.; Eladawy, Mohamed

doi:10.1007/s12633-019-0097-0

Cited by 4 publications

(1 citation statement)

References 39 publications

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“…Nowadays, researchers have developed various modified FinFET architecture while following the ITRS roadmap and Moore's law 10 . DMG (double material gate) FinFET, 11 TMG (triple material gate) FinFET, Step FinFET, 12 GAA (gate‐all‐around) 13 FinFET, cylindrical FinFET, omega gate FinFET, and multi Fin FinFET are the various inventive configuration of FinFET structure 14 . Vinay et al 15 compared the performance of nanowire FET and bulk‐Si FinFET device for the 5 nm technology node.…”

Section: Introductionmentioning

confidence: 99%

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Das

Maity

Chowdhury

et al. 2021

Int J RF Mic Comp-Aid Eng

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This dissertation demonstrates the reliability issues associated with the temperature of Ge multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on short channel effectss such as threshold voltage (Vth), sub‐threshold swing (SS), and switching ratio are observed. The variation in temperature on various important radio frequency (RE)/analog, linearity, and harmonic distortion characteristics are studied and analyzed over a wide range of temperatures (300–500 K). The simulation study revealed that Mch‐FinFET devices exhibit 61.6% improvement in ION with minimum SS value. The improvement of SS, switching ratio and Vth can be observed with temperature fall. The enhancement in performance of various RF/analog attributes such transconductance, device efficiency, transconductance frequency product, gain frequency product, cut‐off frequency, and intrinsic gain with lowering of temperature. However, Mch‐FinFET device provides a significant improvement of higher‐order current and voltage intercept points such as IIP3, VIP2, VIP3, and 1 dB compression point with lesser harmonic distortion such as HD2, HD3, and THD at elevated temperature. The superior efficiency of DC and RF/analog attributes, greater linearity, and minor harmonic distortion performance of Mch‐FinFET make it more considerable to design low power Complementary metal–oxide–semiconductor (CMOS) circuits.

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