Threshold voltage modeling for dual‐metal quadruple‐gate (DMQG) MOSFETs

Abstract

Summary In this paper, a three‐dimensional (3D) model of threshold voltage is presented for dual‐metal quadruple‐gate metal‐oxide‐semiconductor field effect transistors. The 3D channel potential is obtained by solving 3D Laplace's equation using an isomorphic polynomial function. Threshold voltage is defined as the gate voltage, at which the integrated charge (Qinv) at the ‘virtual‐cathode’ reaches to a critical charge Qth. The potential distribution and the threshold voltage are studied with varying the device parameters like gate metal work functions, channel cross‐section, oxide thickness, and gate length ratio. Further, the drain‐induced barrier lowering has also been analyzed for different gate length ratios. The model results are compared with the numerical simulation results obtained from 3D ATLAS device simulation results. Copyright © 2015 John Wiley & Sons, Ltd.

Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor

“…Similar dimensions and doping concentrations utilized for a single-channel were used here, other than inter-oxide layer thickness. Single metal gate was replaced by DMG, and the work functions for metal 1 and metal 2 were 4.8 eV (gold) and 4.33 eV (titanium), respectively, considering the values from [16]. The length for both metals was 500 nm [17].…”

Analysis of Junctionless Nanowire Transistor with Heterojunction, Metal Nitride and Dual Metal Gate

“…Single gate was divided into two different metals with different work functions at an equal distance. Metals 1 and 2 were equally divided by 500 nm each, as suggested in [16], and the work function of metal 1 equal to 4.8 eV (gold) and of metal 2 equal to 4.33 eV (titanium) are taken from [17]. Second, in the DMG structure, heterojunction was implemented.…”