Preparation and characterization of CuInSe2 thin films by chemical bath deposition technique

Deposition and characterization of CuInSe2 films for solar cells using an optimized chemical route

“…The calculated E g results equal to 1.01 eV, in good agreement with values previously reported in the literature for CISe prepared by techniques such as electrodeposition, ALD and CVD, among others [22][23][24]. It is well known that the semi conducting properties of chalcopyrites depend on the non-stoichiometry and are governed by the presence of intrinsic defects such as vacancies and interstitials [21].…”

Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells

“…In addition, the band gap of the prepared CuInSe 2 powders was calculated about 1.02 eV using a UV-Vis-NIR spectrophotometer in the wavelength range of 500-1500 nm at room temperature. The band gap of the prepared powders is consistent with the previous report [20].…”

Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

“…Cu(In, Ga)Se 2 (CIGS) is a very promising semiconductor material for solar cell [1,2] and photoelectrochemical hydrogen production application [3]. Thin film CIGS solar cell devices, fabricated from a multistep physical vapor deposition (PVD) process, have demonstrated a record conversion efficiency of 20.3% [4].…”