Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

Liu, Fangyang; Huang, Chun; Lai, Yanqing; Zhang, Zhian; Li, Jie; Liu, Yexiang

doi:10.1016/j.jallcom.2010.12.031

Cited by 37 publications

(32 citation statements)

References 28 publications

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“…These additives form complexes with the metal ions in the solution such as Cu, thereby resulting in controlled deposition rates and hence the morphology [55,56]. Good quality CIGS thin films were also prepared from sulfate-citrate and chloride-citrate solutions [53,57,58] and control of the optical band gap by increasing the Ga content in the films was demonstrated [59].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

“…The applied pulse-voltage and the corresponding current density curves from Figure 6 note that there is a small positive current density during the pulse off-time though no voltage is applied. This could be due to the presence of an electric double layer at cathode-electrolyte interface forming a capacitor of molecular dimension [58,77]. The duty cycle for the application of pulses is varied in the range of 17-67% (varied off-time with fixed on-time).…”

Section: Study I: Pulse Electrodeposition Of Cuinse 2 Filmsmentioning

confidence: 99%

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Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Section: Study I: Pulse Electrodeposition Of Cuinse 2 Filmsmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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show abstract

“…Different kinds of non-vacuum methods have been utilized to prepare Cu(In, Ga)Se 2 materials. These methods include the synthesis of Cu-In alloys via the melt atomization technique [6,7], the preparation of inks containing copper and indium oxide or nitride [8,9], mechanochemical processing (MCP) [10] and the electrodeposition [11]. In addition, the preparation of a solution with copper and indium compounds and hydrazine was also proposed [12,13].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of CuInSe2 films via selenizing the Cu–In alloy-containing nanopowders

Liu

Chen

2012

Journal of Alloys and Compounds

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“…Thus it appeared that the indium deposition was carried out under a 3D growth with instantaneous nucleation. Liu et al 77) prepared Cu(In,Ga)Se 2 thin films on Mo/glass electrodes from aqueous solution containing sodium sulfamate electrolyte by pulse electrodeposition. The cyclic voltammetric studies showed the potential range (−0.6 V vs. SCE) for Cu, In, Ga and Se co-electrodeposition and the chronoamperometric investigation revealed that the co-deposition of the species occurred under 3D growth with instantaneous nucleation.…”

Section: 74mentioning

confidence: 99%

Electrochemical behaviors of Indium

Chung¹,

Lee²

2012

Journal of Electrochemical Science and Technology

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:Many researchers focus on indium contained semiconductors and alloy compounds for their various applications. Electrochemists want to obtain indium contained compounds simply via one-step electrodeposition. First of all, electrochemistry of constituent elements must be understood in order to develop the best condition for the electrodeposition of indium contained compounds. We will review the electrochemistry of indium. Equilibria between indium metal and indium ions and the standard electrode potentials of the equilibria will be reviewed. The electrochemical reactions of indium species are affected by surrounding conditions. Thus dependences of electrochemical behaviors of indium metal and indium ions on various parameters will be reviewed.

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Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

Cited by 37 publications

References 28 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Synthesis of CuInSe2 films via selenizing the Cu–In alloy-containing nanopowders

Electrochemical behaviors of Indium

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