An investigation of the kinetic behavior of MAPbI 3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transitionstate-formation steps that describe well the experimental current− voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.