Deposition and characterization of CuInSe2 films for solar cells using an optimized chemical route

Berruet, Mariana; Schreiner, W. H.; Ceré, Silvia; Vázquez, M.

doi:10.1016/j.jallcom.2010.11.190

Cited by 11 publications

(8 citation statements)

References 21 publications

(26 reference statements)

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“…After etching, the disappearance of the signal from this phase is evident and the presence of chalcopyrite phase is observed. These results are in good agreement with previously published work reporting the deposition of chalcogenide thin films on FTO and glass substrates [29].…”

Section: Chemical Composition and Structural Studiessupporting

confidence: 93%

“…With illumination, the potential moves to more positive values (positive photopotential) and the current moves in the negative direction (negative photocurrent), confirming the p-type nature of the film. A deeper explanation on the mechanism of electron transport to validate p-type nature and the photoresponse can be seen in our previous work [29].…”

Section: Semiconducting Properties: Band Gap Energy and Conduction Typementioning

confidence: 83%

“…This is an indication that the film is a mixture of CH and CA orders. The broad peak that appears at 320 cm -1 may be assigned to b-In 2 S 3 formed as secondary phase [28,29]. The peak at 470 cm -1 can be attributed to Cu 2-x S. Before etching, a peak of Cu 2-x S can be observed.…”

Section: Chemical Composition and Structural Studiesmentioning

confidence: 97%

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Characterization of CuInS2 thin films prepared by one-step electrodeposition

et al. 2014

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Section: Chemical Composition and Structural Studiessupporting

confidence: 93%

Section: Semiconducting Properties: Band Gap Energy and Conduction Typementioning

confidence: 83%

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Characterization of CuInS2 thin films prepared by one-step electrodeposition

et al. 2014

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“…The p-type CuInSe 2 films were synthesized onto glass slides in the presence of a complexing agent, such as triethanolamine (TEA) and sodium citrate (CitNa), as indicated in Equations ( 32) and (33). The obtained films were heated at 400 • C under an argon atmosphere to remove the detrimental secondary phase [110]. Finally, the formation of films could be seen in Equation (34).…”

Section: Copper Indium Diselenide Filmsmentioning

confidence: 99%

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

Soonmin

2022

Applied Sciences

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest as it possesses many advantages when compared to other deposition methods. For example, large area depositions could be carried out in any substrates at lower temperatures via inexpensive instruments; moreover, a vacuum chamber is not required, it has an excellent growth rate, and the unique film properties could be controlled. In this work, metal sulfide, metal selenide, metal oxide, and metal telluride were deposited on substrates by using the SILAR method. According to the findings, both thick and thin films could be synthesized under specific conditions during the experiment. Additionally, the results showed that the number of deposition cycles, rinsing times, immersion times, and concentrations of the precursors affected the crystallinities, grain sizes, film thicknesses, surface roughness, and shapes of the obtained films. These films could be used in solar cell applications with high power conversion efficiency due to the appropriate band gap value and high absorption coefficient value.

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“…CIGS based photovoltaic devices have been the subject of active research using a variety of synthetic approaches due to the desirable cost per watt brought about by the material's exceptional optical absorption coefficient and reasonable cell efficiency, as high as 18% [18][19][20][21][22][23][24][25][26][27]. To produce the most efficient CIGS solar cells, a three-step process is employed.…”

Section: Introductionmentioning

confidence: 99%