2014
DOI: 10.1007/s10800-014-0752-5
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Characterization of CuInS2 thin films prepared by one-step electrodeposition

Abstract: Your article is protected by copyright and all rights are held exclusively by Springer Science +Business Media Dordrecht. This e-offprint is for personal use only and shall not be selfarchived in electronic repositories. If you wish to self-archive your article, please use the accepted manuscript version for posting on your own website. You may further deposit the accepted manuscript version in any repository, provided it is only made publicly available 12 months after official publication or later and provide… Show more

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Cited by 12 publications
(10 citation statements)
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References 37 publications
(66 reference statements)
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“…Aerwards, the sulfured samples were etched by dipping in 0.1 M KCN solution for 1 min to remove the unwanted secondary phases such as CuS from the CIS surface. 19 Aer etching, all the samples were rinsed with DI water and thicknesses are estimated about 1.5 mm by means of weight difference technique supposing the lm to be uniform and dense as bulk. The phase purity and crystal structure for CICS lms were obtained using a diffractometer X'Pert pro PANalytical supplied with a monochromatic CuK a radiation source (l ¼ 1.5406 A) and operated at a potential difference of 50 kV, and a current of 40 mA.…”
Section: Methodsmentioning
confidence: 99%
“…Aerwards, the sulfured samples were etched by dipping in 0.1 M KCN solution for 1 min to remove the unwanted secondary phases such as CuS from the CIS surface. 19 Aer etching, all the samples were rinsed with DI water and thicknesses are estimated about 1.5 mm by means of weight difference technique supposing the lm to be uniform and dense as bulk. The phase purity and crystal structure for CICS lms were obtained using a diffractometer X'Pert pro PANalytical supplied with a monochromatic CuK a radiation source (l ¼ 1.5406 A) and operated at a potential difference of 50 kV, and a current of 40 mA.…”
Section: Methodsmentioning
confidence: 99%
“…The electrochemical deposition of the binary compounds CuÀ S and GaÀ S was carried out to support the Figure 1a). The first cathodic peak centered at À 0.7 V, assigned as C1, is attributed to the reduction of Cu(II) to Cu(I), [18] which, consequently, reacts with the product of S 2 O 3 2À reduction forming copper(I) sulfide. [19] The other peak, C2, at À 1.25 V is due to metallic copper deposition.…”
Section: Double-pulse Electrodeposition Of Cugas 2 Photovoltaic Thin mentioning
confidence: 99%
“…A c c e p t e d M a n u s c r i p t 5 pretreated as described elsewhere 3,26,27 and cut into square pieces (2 x 2 cm 2 ). The active geometrical area was limited to 1.22 cm 2 by the electrochemical cell design.…”
Section: Page 4 Of 19 Author Submitted Manuscript -Mrx-104073r1mentioning
confidence: 99%
“…CuInS 2 was electrodeposited on top of FTO/TiO /In 2 S 3 substrates following the procedure described in our previous work 3 . Briefly, the electrodeposition of the CIS films was carried out using a standard three-electrode cell; a saturated calomel electrode (SCE) and a Pt mesh of big area were used as reference and counter electrodes respectively.…”
Section: Cis Electrochemical Depositionmentioning
confidence: 99%
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