Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness

Czyszanowski, Tomasz; Stanczyk, Szymon; Kafar, Anna; Perlin, P.

doi:10.7567/jjap.53.032701

Cited by 7 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To make our results clearer, some other reports about the performance of GaN-based violet LDs are listed in Table II. 9,10,[30][31][32][33][34][35] Table II indicates that there is no LD structure similar to ours (u-GaN UWG=p-AlGaN EBL) in the previously reported lasing GaN-based LDs, and that the threshold current density of our LD II-1 (3.3 kA=cm 2 ) is slightly higher than the lowest value (2.3 kA=cm 2 ). Note that the lowest threshold current density is obtained using a special GaN substrate, i.e., a plasmonic GaN substrate, which is ultra highly doped by hydride vapor phase epitaxy (HVPE) in a high-pressure method.…”

mentioning

confidence: 93%

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Liang

Zhao

Jiang

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In our new GaN-based quantum well (QW) laser diode (LD) structure, an unintentionally doped GaN layer (u-GaN) is designed to replace the conventional p-GaN upper waveguide (UWG) and is shifted to locate between the last quantum barrier and the electron-blocking layer. Theoretical calculation demonstrates that the performance of the new LD can be improved significantly by reducing the optical loss and leakage current. Moreover, the experimental results verify that, compared with that of the conventional LD, the threshold current density of the new LD, i.e., 3.8 kA/cm 2 , is reduced by 46% and the maximal light power increases by 137% under a pulsed current of 1200 mA.

show abstract

mentioning

confidence: 93%

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Liang

Zhao

Jiang

et al. 2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Many researchers have proposed different electron barrier layer structures to reduce polarization effect and regulate band bending, so as to reduce carrier leakage and improve output power. Compared with the traditional P-AlGaN electron barrier and p-AlGaN EBL-based variants [5][6][7], the quaternary alloy AlInGaN EBL [8][9] has more advantages in suppressing electron leakage and improving hole injection, because it can reduce the valence band barrier height of hole injection while increasing the conduction band barrier height. However, few comparative studies have been conducted on AlInGaN EBL with different Al components, especially when the Al content is higher than 25%.…”

Section: Introductionmentioning

confidence: 99%

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Wang,

Liao,

Luo

et al. 2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

View full text Add to dashboard Cite

The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by crosslight software. Compared with the Al0.322In0.08Ga0.598N EBL, the Al0.447In0.174Ga0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al0.447In0.174Ga0.379N electron barrier material with higher Al component further reduces the polarization effect, thus improving the hole injection efficiency and reducing the electron leakage. Simulation results reveal that the threshold current decreases from 25.3mA to 22.6mA, and the output power increases from 98.3mW to 155.9mW. At the same time, the optical field distribution of higher Al component EBL structure laser is more concentrated in the active region, which further reduces the absorption loss, so that the optical confinement factor increases from 1.14% to 1.2%, and the slope efficiency also increases from 0.77W/A to 1.18W/A.

show abstract

“…Unfortunately, in case of nitride material system, there is a significant lattice mismatch between AlN and GaN [8], which strongly limits the thickness attainable in the AlGaN cladding layers. AlGaN layers thicker than the critical thickness tend to crack and the stress introduced in the Al x Ga 1−x N cladding layers results in poor quality material [7,17].…”

Section: Introductionmentioning

confidence: 99%

Effect of GaN substrate thickness on the optical field of InGaN lasers diodes

García

Sánchez

2018

Rev. Mex. Fís.

View full text Add to dashboard Cite

In this work the influence of GaN substrate thickness on the near and far-field patternsof InGaN lasers structures is analyzed. In simulation a conventional separateconfinement heterostructure of InGaN-MQW / GaN / AlGaN is considered. Afluctuating behavior is found, showing that for some values of the substrate thicknessthe near and far- field patterns can be optimized and there are critical values of thesubstrate thickness that produce the lowest values of the confinement factor and thehigher values of the full wide half-maximum of the far field. It is also shown that bysubstituting the GaN contact layer by an AlxGa1-xN layer with a parabolic variation ofthe Al content it is possible to reduce the optical field leakage to substrate. Resultsindicated that properly choosing the thickness of the substrate and replacing the n-GaNcontact layer by a graded-index (GRIN) AlxGa1-xN layer it is possible to improve boththe confinement factor and Far field pattern in nitride lasers.

show abstract

Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness

Cited by 7 publications

References 12 publications

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Effect of GaN substrate thickness on the optical field of InGaN lasers diodes

Contact Info

Product

Resources

About