Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Abstract

The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by crosslight software. Compared with the Al0.322In0.08Ga0.598N EBL, the Al0.447In0.174Ga0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al0.447In0.174Ga0.379N electron barrier material with higher Al component further reduces the polarization effect, thus improving the hole injection efficiency and reducing the electron leakage. Simulation results reveal that the threshold current decreases from 25.3mA to 22.6mA, and the output power increases from 98.3mW to 155.9mW. At the same time, the optical field distribution of higher Al component EBL structure laser is more concentrated in the active region, which further reduces the absorption loss, so that the optical confinement factor increases from 1.14% to 1.2%, and the slope efficiency also increases from 0.77W/A to 1.18W/A.