Abstract:In this work the influence of GaN substrate thickness on the near and far-field patternsof InGaN lasers structures is analyzed. In simulation a conventional separateconfinement heterostructure of InGaN-MQW / GaN / AlGaN is considered. Afluctuating behavior is found, showing that for some values of the substrate thicknessthe near and far- field patterns can be optimized and there are critical values of thesubstrate thickness that produce the lowest values of the confinement factor and thehigher values of the fu… Show more
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