We have fabricated two types of InGaN superluminescent diodes applying two different concepts of cavity suppression: a tilted waveguide geometry and passive absorber solution. Both types of devices showed superluminescence behavior, but both eventually lased under the application of high enough current. The lasing threshold turned out to be higher for tilted waveguide devices. By using long (2 mm) waveguides, we managed to demonstrate the power in superluminescent mode exceeding 100 mW in blue/violet part of the spectrum.
We report on the continuous wave, room temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices, based on the (Al,In)GaN material system, is described. The uncoated devices were mounted into TO packages for characterization and exhibited single wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution limited full-width at half maximum of 6.5 pm.
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