Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liu, Shuangtao; Xing, Yufeng; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

doi:10.7567/jjap.57.070307

Cited by 13 publications

(4 citation statements)

References 34 publications

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“…In the simulations, InGaN LDs with GaN barriers were based on Ref [ 16 ], and consist of a 1 μm Si-doped (3 × 10 18 cm −3 ) c-plane GaN substrate, a 1 μm Si-doped (3 × 10 18 cm −3 ) Al 0.08 Ga 0.92 N CL, and a 0.12 μm Si-doped (3 × 10 18 cm −3 ) GaN lower WL. The MQWs consisted of two 2.5 nm In 0.15 Ga 0.85 N QWs and three 14 nm GaN barriers.…”

Section: Structures and Parametersmentioning

confidence: 99%

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Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng

Zhang

et al. 2021

Nanomaterials

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An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

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Section: Structures and Parametersmentioning

confidence: 99%

“…The optoelectronic properties and device performance of these LDs are numerically compared with those with GaN and InGaN barriers. The simulations are performed with LASTIP software [ 15 ], which is frequently used to predict the characteristics of GaN-based LDs [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng

Zhang

et al. 2021

Nanomaterials

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“…The traditional InGaN LDs with GaN QBs is based on those described in [28]; they comprise a 1 µm-thick n-GaN (3 × 10 18 cm −3 ) substrate, a 1 µm-thick n-Al 0.08 Ga 0.92 N (3 × 10 18 cm −3 ) cladding layer, a 120 nm-thick n-GaN (5 × 10 17 cm −3 ) waveguide layer, and two InGaN/GaN MQWs with undoped In 0.15 Ga 0.85 N QWs (2.5 nm) separated by undoped GaN QBs (14 nm). This structure was followed with a 20 nm-thick p-doped Al 0.15 Ga 0.85 N (5 × 10 19 cm −3 ) EBL, a 100 nm-thick p-GaN (2 × 10 19 cm −3 ) waveguide layer, a 1 µm-thick p-Al 0.06 Ga 0.94 N (2 × 10 19 cm −3 ) cladding layer, and a 40 nm-thick p ++ -GaN (1 × 10 20 cm −3 ) ohmic contact layer.…”

Section: Device Structures and Parametersmentioning

confidence: 99%

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Jiang¹,

Cheng²,

Lin³

et al. 2021

Semicond. Sci. Technol.

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InGaN laser diodes (LDs) with composition-graded (CG) quantum barriers (QBs) are proposed and our study of them described. In the CG QB LDs, the indium content x in the In x Ga 1-x N QB was increased gradually along the growth direction. Their laser power-current-voltage performance curves, carrier concentrations, energy band diagrams, current distributions, electrostatic fields, and stimulated recombination rate in the active region were studied. It is shown that the laser power increases from 59.8 mW to 106.9 mW at 120 mA and the slope efficiency increases from 0.76 W A −1 to 1.27 W A −1 , when the conventional GaN QBs are replaced by the proposed CG QBs. The simulation results indicate that LDs with CG QBs performed better than LDs with conventional GaN QBs and InGaN QBs because the suppression of electron leakage is more efficient, as is hole injection and carrier-stimulated recombination in multiple quantum wells through the appropriate formation of polarization energy band structures.

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“…GaN and AlN alloys are good choices for the fabrication of optoelectronics and electronic devices, such as light-emitting diodes, ultraviolet detectors, and high-power and high-frequency electronic devices, due to their excellent material properties [1][2][3][4][5][6][7][8][9] . These applications lead to a huge market, which provides a strong impetus for research.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Tan¹,

Egawa²

2019

J. Semicond.

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AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) on a silicon substrate were fabricated with silicon oxide as a gate dielectric by sputtering deposition and electron-beam (EB) evaporation. It was found that the oxide deposition method and conditions have great influences on the electrical properties of HEMTs. The low sputtering temperature or oxygen introduction at higher temperature results in a positive equivalent charge density at the oxide/AlGaN interface (N equ ), which induces a negative shift of threshold voltage and an increase in both sheet electron density (n s ) and drain current density (I D ). Contrarily, EB deposition makes a negative N equ , resulting in reduced n s and I D . Besides, the maximum transconductance (g m-max ) decreases and the off-state gate current density (I G-off ) increases for oxides at lower sputtering temperature compared with that at higher temperature, possibly due to a more serious sputter-induced damage and much larger N equ at lower sputtering temperature. At high sputtering temperature, I G-off decreases by two orders of magnitude compared to that without oxygen, which indicates that oxygen introduction and partial pressure depression of argon decreases the sputter-induced damage significantly. I G-off for EB-evaporated samples is lower by orders of magnitude than that of sputtered ones, possibly attributed to the lower damage of EB evaporation to the barrier layer surface.

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Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Cited by 13 publications

References 34 publications

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

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