On the Impact of Radiation Losses in TRL Calibrations

Spirito, M.; Martino, Carmine De; Galatro, L.

doi:10.1109/arftg.2018.8423820

Cited by 11 publications

(5 citation statements)

References 10 publications

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“…In Godshalk (1992) the effect of surface waves in wafer probing environments has been discussed. More recently, the effect of substrate modes on multiline-Thru-Reflect-Line (mTRL) calibrated measurements has been clarified (Phung et al, 2018a) up to 220 GHz and the multimode propagation causing radiation effects has been discussed up to 325 GHz (Spirito et al, 2018b).…”

Section: Introductionmentioning

confidence: 99%

Modeling and Analytical Description of Parasitic Probe Effects in Measurements of Conductor-Backed Coplanar Waveguides

Phung¹,

Arz²

2023

Adv. Radio Sci.

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Abstract. On-wafer measurements are of fundamental importance to the characterization of active and passive devices at millimetre-wave frequencies. They have been commonly known to be ambitious and challenging due to the occurrence of parasitic effects originating from probes, multimode propagation, crosstalk between adjacent structures and radiation. While a lot of investigations have been performed for conventional coplanar waveguides (CPW) measured on ceramic chucks, the parasitic effects occuring in conductor-backed CPWs (CB-CPWs) have not been fully understood yet. Therefore, this paper presents a thorough study for CB-CPWs based on electromagnetic simulations. Additionally, this paper proposes an analytical description accounting for the probe geometries to predict the occurrence of resonance effects due to the propagation of the parallel-plate-line (PPL) mode. For the first time, a new analytical description including the effects of the probe geometries is presented and validated by both measurements and simulations.

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Section: Introductionmentioning

confidence: 99%

Modeling and Analytical Description of Parasitic Probe Effects in Measurements of Conductor-Backed Coplanar Waveguides

Phung¹,

Arz²

2023

Adv. Radio Sci.

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“…To deepen the understanding of high frequency measurements, electromagnetic (EM) simulation is usually performed [10]- [15], [17], [19]- [21]. Out of these reported works, most of the EM simulation analyses are dedicated to test structures fabricated on non-Silicon substrate up to 110 GHz [12], [20] and above 110 GHz [10], [11], [15]. In [10], [15], the EM simulation analysis covering more than one frequency band is presented using only one RF probe model.…”

Section: Introductionmentioning

confidence: 99%

“…Out of these reported works, most of the EM simulation analyses are dedicated to test structures fabricated on non-Silicon substrate up to 110 GHz [12], [20] and above 110 GHz [10], [11], [15]. In [10], [15], the EM simulation analysis covering more than one frequency band is presented using only one RF probe model. For Si based test structures also, EM simulation analysis covering more than one frequency band (1 GHz to above 110 GHz) is presented using only one RF probe model [13], [14], [17].…”

Section: Introductionmentioning

confidence: 99%

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Yadav

Deng

Fregonèse

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this paper, we present on-silicon structures onwafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behaviour in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful true EM model of the RF probes is an essential requirement. In this process, four different RF probes used during measurements in the frequency bands 1 GHz-110 GHz, 140 GHz-220 GHz, 220 GHz-325 GHz and 325 GHz-500 GHz are designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.

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“…Up to now, most of the time, external calibration kits on alumina substrates are used. However, above 50-100 GHz, this characterization approach suffers from high measurement uncertainties due to difference of dielectric constant between the calibration kit and the silicon wafer, and also the coupling between the probes and the silicon wafer [1,2]. To overcome these issues, some authors propose to integrate an on-wafer calibration kit together with the DUT (Device Under Test) [3].…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Margalef‐Rovira

Saadi

Bourdel

et al. 2020

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)

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In this paper, an innovative millimeter-wave (mmwave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

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On the Impact of Radiation Losses in TRL Calibrations

Cited by 11 publications

References 10 publications

Modeling and Analytical Description of Parasitic Probe Effects in Measurements of Conductor-Backed Coplanar Waveguides

Modeling and Analytical Description of Parasitic Probe Effects in Measurements of Conductor-Backed Coplanar Waveguides

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

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