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This work provides a new co‐design methodology of ultrawide band (UWB) low‐noise amplifier (LNA) with high out of band interference cancellation. The solution consists to cascade a selective microstrip UWB bandpass filter (BPF) with the proposed 0.18 µm complementary metal–oxide–semiconductor‐based LNA. Indeed, the usefulness of this co‐design technique is to address the interference mitigation through the BPF and amplification function by using the LNA. The proposed solution remains powerful since the out of band interferences are well avoided with an efficient amplification performance while well fulfilling UWB requirements, i.e. good matching over a wide bandwidth from 3.2 to 10.64 GHz, 17 dB of power gain (S21), the noise figure varies between 2.5 and 5.7 dB, and the dissipated power (PDC) is typically 16.5 mW. It is relevant to point out that the computed figure‐of‐merit of the proposed circuit is 29.03 which is very competitive compared with state‐of‐the art.

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This paper focuses on the design of highperformance Coupled Slow-wave CoPlanar Waveguide (CS-CPW) in CMOS technologies for the mm-wave frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two millimeter-wave backward directional 3-dB couplers are designed in a Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) 55-nm technology for 120 and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-ofthe-art performance, with a good agreement between the analytical model, electromagnetic simulations and measurement results.

In this letter, a new compact microstrip ultra‐wideband (UWB) bandpass filter (BPF) is proposed. Using a new electrical model leading to a simple structure based on radial stub resonator (RSR), its originality resides in its noteworthy simple design approach where the filter response can be accurately adjusted by tuning three parameters only. The fabricated filter shows a good agreement between simulations and measurements whereas fulfilling UWB requirements, i.e., enhanced selectivity, good matching and flatness within the entire band of operation, and sufficiently constant group delay. With an overall size of 9.53 mm x 8.28 mm, a high compactness has been achieved, making this structure one of the most compact filters ever reported. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1707–1710, 2016

To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent circuit consists of two parasitic distributed interelectrode extrinsic capacitances and two additional feedback intrinsic resistances. The circuit element values were obtained starting from measured S‐parameters and using Y‐matrix transformations. The efficiency of the proposed methodology was demonstrated through excellent agreement between simulated and measured data up to 60 GHz.

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