An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices

Abstract

To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent circuit consists of two parasitic distributed interelectrode extrinsic capacitances and two additional feedback intrinsic resistances. The circuit element values were obtained starting from measured S‐parameters and using Y‐matrix transformations. The efficiency of the proposed methodology was demonstrated through excellent agreement between simulated and measured data up to 60 GHz.

A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

“…Therefore, the final values of and and all the remaining intrinsic parameters can be selected from the iteration closest to the error minimum, where both and are positive. Due to similarity to capacitance scanning algorithms, 9–14 widely spread in common‐source HEMT modeling, we called the developed flow a parasitic resistance scanning algorithm. Figure 9 illustrates a complete switch‐HEMT extraction flow, including the mentioned algorithm.…”

“…For decades, tremendous research efforts were focused on the characterization and extraction of transistor models for amplifier applications. [5][6][7][8][9][10][11][12][13][14] Lots of models were proposed for common-source devices manufactured by various process technologies. [15][16][17][18] However, switch-HEMT modeling remains challenging as only a few works studied its pitfalls.…”

“…It is well known that the key to the first‐pass success of microwave circuit design is accurate device modeling. For decades, tremendous research efforts were focused on the characterization and extraction of transistor models for amplifier applications 5–14 . Lots of models were proposed for common‐source devices manufactured by various process technologies 15–18 .…”

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

“…Thence, modeling and characterization of GaN HEMT devices at high frequency have attracted much attention from many researchers to provide accurate models to circuit designers 1–5 . However, each model requires precise extraction of its small‐signal equivalent circuit model (EC‐SSM) parameters 6–12 . This unavoidable step typically starts with an accurate determination of the extrinsic parameters of the EC‐SSM to assess the overall performance of such models.…”

“…[1][2][3][4][5] However, each model requires precise extraction of its small-signal equivalent circuit model (EC-SSM) parameters. [6][7][8][9][10][11][12] This unavoidable step typically starts with an accurate determination of the extrinsic parameters of the EC-SSM to assess the overall performance of such models. In turn, a reliable extraction of their parasitic capacitances is crucial.…”