New
            <scp>small‐signal</scp>
            extraction method applied to
            <scp>GaN</scp>
            <scp>HEMTs</scp>
            on different substrates

Sabbagh, Mohamad Al; Yagoub, M.C.E.; Park, Jeongwon

doi:10.1002/mmce.22291

Cited by 11 publications

(9 citation statements)

References 28 publications

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“…The equivalent-circuit model in Figure 8 was used to model the measured S-parameters of the studied device. The equivalent-circuit parameters (ECPs) were extracted as described in [ 15 ], using the well-known “cold” pinch-off approach that has been widely and successfully applied to the GaN technology over the years [ 46 , 47 , 48 , 49 , 50 ]. The effect of T a on the measured S-parameters at the selected bias point is shown in Figure 9 .…”

Section: Experimental Results and Systematic Analysismentioning

confidence: 99%

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

2021

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Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

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Section: Experimental Results and Systematic Analysismentioning

confidence: 99%

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

2021

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“…The equivalent-circuit model in Figure 6 was used to represent the measured S-parameters of the six studied devices. The ECPs were obtained using the well-known "cold" pinch-off methods, which has been widely and successfully applied to HEMT technology in recent years [44][45][46][47][48][49][50]. The intrinsic RF transconductance values are then extracted at the "hot" bias conditions of interest.…”

Section: Resultsmentioning

confidence: 99%

Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions

Alim

Jarndal

Gaquière

et al. 2021

Preprint

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The purpose of this experimental study is to evaluate quantitatively the impact of the temperature on the behavior of various high electron-mobility transistor (HEMT) technologies through the analysis of the DC and RF transconductance. The experimental data are reported for six different HEMT devices, in order to develop a comparative analysis based on various technologies, including gallium arsenide (GaAs) and gallium nitride (GaN) materials, matched and pseudomorphic HEMTs, single- (S-H) and double-heterojunction (D-H) HEMTs, and both virgin and multi-layer devices. The reported findings show that the impact of the ambient temperature on the HEMT behavior strongly depend on the tested technology and operating conditions. As a matter of fact, a higher temperature can lead to increased or degraded transconductance, depending on the device technologies and bias point. In the GaAs-based devices, an operating bias condition at which the DC and RF transconductance are temperature insensitive can be defined, owing to two-opposite temperature-dependent effects counteracting with each other.

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“…This makes C gsi about 3–5 times larger than C gdi. 20 So, to extract the capacitances C gdi , C gsi , and C gse of the HEMT GaN/Si transistor, the process is straightforward; the values of the two capacitances can be deduced directly from (9) and (10)

C_{gdi} = C_{gdo},

C_{gsi} = C_{gso} - C_{gse} .

…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

“…As for the GaN/SiC, its extrinsic capacitance values are more complex to extract because of its asymmetric structure. To address this issue, and according to, 20 we assumed that C gsi is about 3–5 times larger than C gdi , that is, the value of C gsi can be set in the range [3 C gdi − 5 C gdi ]. Then, we followed the same procedure mentioned above for C gdi , C gsi , and C gse .…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

“…Many approaches have been introduced in the literature to model HEMT GaN extrinsic components from measured S ‐parameters. To address this issue, we have used two main substrate materials, namely, silicon carbide (SiC) and silicon (Si), which are most commonly used 19–21 . The SiC substrate has 390–450 W/m K thermal conductivity and 10 4 to 10 6 Ω‐cm electrical resistivity while the Si substrate has a thermal conductivity 150 W/m·K and an electrical resistivity around 2.3 × 10 5 Ω‐cm 20 …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Maafri

Taibi

et al. 2023

Int J Numerical Modelling

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This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

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New small‐signal extraction method applied to GaN HEMTs on different substrates

Cited by 11 publications

References 28 publications

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

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