An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Abstract

This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

“…In recent years, research on the conventional small-signal model has focused on the characterization of non-ideal effects corresponding to ultra-high frequency rates and severe parasitics [6][7][8]. The reliability modeling-related research on this basis has been insufficient, still focusing mainly on the physical level of the device, with constraints such as long R&D cycle time, slow modeling, and incompatibility with EDA softwares [9,10].…”