MOM Capacitance Characterization in G-Band using On-wafer 3D-TRL Calibration

Saadi, Abdelhalim A.; Margalef, M.; Pilliet, S. Le; Gaquière, C.; Gloria, D.; Durand, C.; Ferrari, Philippe

doi:10.23919/eumic.2019.8909558

Cited by 4 publications

(7 citation statements)

References 5 publications

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“…This can be easily explained by the degradation of the MOM capacitor quality factor at mm-wave frequencies. For instance, at 140 GHz, the measured quality factor of a MOM capacitor in this technology is around 10 [11]. Thus, it can be expected a quality factor around 20 at 70 GHz.…”

Section: B Resultsmentioning

confidence: 81%

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Margalef‐Rovira

Saadi

Vincent

et al. 2020

IEEE Trans. Electron Devices

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Section: B Resultsmentioning

confidence: 81%

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Margalef‐Rovira

Saadi

Vincent

et al. 2020

IEEE Trans. Electron Devices

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“…The main advantage of the proposed technique is that the parasitic capacitances extraction is performed at high frequency and over a wide frequency range. This is to meet the growing demand from designers 24–26 …”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

“…Then, the values of the extrinsic resistances and inductances are extracted at high‐frequencies 13 . Though, the development of reliable techniques for accurately extracting extrinsic parameters, mainly parasitic capacitances, is still a challenge for circuit designers, especially in the millimeter wave range 22–26 …”

Section: Introductionmentioning

confidence: 99%

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Maafri

Taibi

et al. 2023

Int J Numerical Modelling

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This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

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“…This means that the quality factor of the equivalent capacitance of an open‐ended stub is twice the quality factor of the transmission line that is used for the stub. Since the S‐CPS has, like the S‐CPW, a high quality factor, which can reach more than 30 depending on the used technology, the equivalent capacitance quality factor can reach more than 60, which is much higher than the quality factor obtained with MOM capacitances at mm‐wave frequencies [4, 5].…”

Section: Synthesis Of High Q‐factor Inductance and Capacitance With S...mentioning

confidence: 99%

“…In ref. [5], the measured Q‐factor of MOM capacitances realised in a BiCMOS 55‐nm technology goes from 14 at 60 GHz to less than

9

at G‐band (140–220 GHz). Thus, the more favourable BEOL (Back‐End‐Of‐Line) of BiCMOS technologies makes it possible to significantly improve the quality factor of inductors and capacitors, but this remains very limited.…”

Section: Introductionmentioning

confidence: 99%

Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

Saadi¹,

Margalef‐Rovira

Amara

et al. 2022

IET Microwaves Antenna & Prop

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In this paper, the slow-wave coplanar stripline (S-CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre-wave band from 50 to 80 GHz. The proposed resonators are designed based on high quality factor quasi-lumped capacitances and inductances offering a great flexibility in terms of design. The derivation of these components from the S-CPS is explained theoretically and their behaviour is validated by EM simulation; an equivalent electrical model is also developed. The proposed concepts are demonstrated in the BiCMOS 55-nm technology, and a good agreement between modelling, EM simulation and measurement results is achieved. The proposed devices could later be considered as interesting elementary blocks for the design of mm-wave filters.

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MOM Capacitance Characterization in G-Band using On-wafer 3D-TRL Calibration

Cited by 4 publications

References 5 publications

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

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