A New High-Frequency HEMT GaN Extrinsic Capacitance Extraction Technique

Maafri, Djabar; Saadi, Abdelhalim A.; Sabbagh, Mohamad Al; Yagoub, M.C.E.

doi:10.1109/lmwc.2021.3124078

Cited by 7 publications

(10 citation statements)

References 8 publications

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“…Once the branch capacitances values are known, the goal of the extraction technique is to determine the remaining capacitances C gdi , C gsi , C gse , C dsi , and C dse , which values are usually difficult to estimate. In the case of the HEMT GaN with silicon substrate (Si), the structure is symmetric under pinch‐off conditions; this allows assuming that C gsi = C gdi and C dsi ≌ 0 13,28 . However, this assumption cannot be applied to the SiC HEMT due to its asymmetric structure.…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

“…By noticing that C gsi varies from 3 C gdi to 5 C gdi and that C gse can be deduced from (10), we tuned their values until reaching their optimal values. As for the remaining capacitances C dsi and C dse , we used the assumption mentioned in 13,28 :

C_{dsi} = 4 C_{dse} .

…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

“…This unavoidable step typically starts with an accurate determination of the extrinsic parameters of the EC‐SSM to assess the overall performance of such models. In turn, a reliable extraction of their parasitic capacitances is crucial 13–18 …”

Section: Introductionmentioning

confidence: 99%

“…In both direct extraction and optimization methods, the GaN HEMT extrinsic parameters are generally obtained by extracting first the extrinsic capacitances under cold pinch‐off conditions and at a low‐frequency range (usually under 5 GHz). Then, the values of the extrinsic resistances and inductances are extracted at high‐frequencies 13 . Though, the development of reliable techniques for accurately extracting extrinsic parameters, mainly parasitic capacitances, is still a challenge for circuit designers, especially in the millimeter wave range 22–26 …”

Section: Introductionmentioning

confidence: 99%

“…In turn, a reliable extraction of their parasitic capacitances is crucial. [13][14][15][16][17][18] Many approaches have been introduced in the literature to model HEMT GaN extrinsic components from measured S-parameters. To address this issue, we have used two main substrate materials, namely, silicon carbide (SiC) and silicon (Si), which are most commonly used.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Maafri

Taibi

et al. 2023

Int J Numerical Modelling

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This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

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Section: Proposed Extraction Methodsmentioning

confidence: 99%

C_{dsi} = 4 C_{dse} .

…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Maafri

Taibi

et al. 2023

Int J Numerical Modelling

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Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

Chang

Panda

Weng

et al. 2023

Semicond. Sci. Technol.

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Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible with AlGaN/GaN HEMTs device processing. The TiN layer serves as an effective Cu-diffusion barrier as no detectable Cu-diffusion was observed when subjected to thermal treatment up to 600 ℃. There is a tendency of N-diffusion across the Ti/GaN interface near which N-deficiency in the GaN epitaxial layer and formation of a nano-sheath of TiN was found. This ultrathin layer of TiN works to further improve the ohmic performance of the electric contact, as reflected in lowered contact resistivity ρC. It is possible to manufacture the TiN thin films with low sheet resistance at a high deposition rate by adjusting the ratios between argon and nitrogen gas flows during sputtering deposition. Contact resistivity ρC, tested for the AlGaN/GaN HEMT devices fabricated on Si substrate according to the TLM standard were found to be as low as 3.65×10-6 Ω-cm2 (RC = 0.54 Ω-mm). The outcomes benchmark favourably against many reported metal-stacking structures for ohmic contacts. The robustness of surface morphology and interface sharpness against thermal treatments make the established ohmic stack structures suitable for scalable device fabrications.

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An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC

Zatout,

Maafri,

Kerai

et al. 2023

2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM)

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A New High-Frequency HEMT GaN Extrinsic Capacitance Extraction Technique

Cited by 7 publications

References 8 publications

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC

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