New Model Proposed for Switching Mechanism of ReRAM

Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

“…Moreover, resistance switching was also developed by time dependent DB. 12) These results suggest the formation of current path called ''filament'' in which the switching property of the ReRAM is generated during the ''forming'' process. To confirm this, the Pt/TiO x /Pt was cut into two pieces after the ''forming'' process and being set into LRS.…”

Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

“…Oxide thin films exhibiting drastic resistance change by external voltage have drawn much attention as promising materials for ultrahigh density resistance random access memory (RRAM). [1][2][3][4][5][6][7][8] The transition from high resistive off-state to low resistive on-state is observed at the set voltage, and the reverse transformation is observed at the reset voltage. The reversible resistance change between low and high resistance state is preferable for the binarized non-volatile memory application.…”

Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory

“…Several physical mechanisms based on either electron or ion switching have been recently suggested in the literature: a model based on trapping of charge carriers [14], electrochemical migration of oxygen vacancies [15], [16], electrochemical migration of oxygen ions [17], [18], a unified physical model [19], a domain model [20], a filament anodization model [21], a thermal dissolution model [22], a two-variable resistor model [23], and others. Despite this, a proper fundamental understanding of the RRAM switching mechanism is still missing hindering further development of this type of memory.…”