Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

Abstract

The resistance switching in Pt/Co-O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radiofrequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co-O/ Pt trilayers. The resistance switching ratio exceeds 10 3 , being sufficiently large for the resistance random access memory (RRAM). Co-O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal-oxide semiconductor process.

Random Circuit Breaker Network Model for Unipolar Resistance Switching

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The existence of reversible resistance switching (RS) behaviors induced by electric stimulus has been known for some time, [1][2][3] and these intriguing physical phenomena have been observed in numerous materials, including oxides. [4][5][6][7][8][9][10][11][12][13][14][15][16][17] As conventional charge-based random access memory is expected to face a size limit in the near future, a surge of renewed interest has been developed in RS phenomena for possible applications in small nonvolatile memory devices called resistance random access memory (RRAM).Of particular interest is unipolar RS, which shows the RS at two values of applied voltage of the same polarity. [15][16][17] The unipolar RS exhibits a much larger resistance change than other RS phenomena, and this greatly simplifies the process of reading the memory state.

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“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17] As conventional charge-based random access memory is expected to face a size limit in the near future, a surge of renewed interest has been developed in RS phenomena for possible applications in small nonvolatile memory devices called resistance random access memory (RRAM).…”

Modeling of field- and time-dependent resistance change phenomena under electrical stresses in Fe–O films

“…Resistive random access memories ͑ReRAMs͒ 1,2 have become one of the most promising candidates replacing present-day nonvolatile memories. Various binary-oxide materials such as TiO 2 , 3 NiO, 4-6 CoO, 7 ZrO, 8 FeO, 9,10 TaO, 11 and HfO 2 ͑Ref. 12͒ have been extensively investigated for ReRAM applications.…”

Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

“…From this point of view, reactive ion etching (RIE), which is widely employed in semiconductor device processing, is considered an excellent technique. We propose in this paper an RIE process for the binary TMOs NiO, 2) CuO, 3) and CoO,4) which are expected to be key constituents of RRAM.…”